JPS5234675A - Manufacturing process of semiconductor device - Google Patents
Manufacturing process of semiconductor deviceInfo
- Publication number
- JPS5234675A JPS5234675A JP11068875A JP11068875A JPS5234675A JP S5234675 A JPS5234675 A JP S5234675A JP 11068875 A JP11068875 A JP 11068875A JP 11068875 A JP11068875 A JP 11068875A JP S5234675 A JPS5234675 A JP S5234675A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- manufacturing process
- emitter
- silicon layer
- crystal silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
Abstract
PURPOSE: To form impurity bearing poly-crystal silicon layer on electrode contact windows of both emitter and base domains by same process.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP50110688A JPS608624B2 (en) | 1975-09-11 | 1975-09-11 | Manufacturing method of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP50110688A JPS608624B2 (en) | 1975-09-11 | 1975-09-11 | Manufacturing method of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5234675A true JPS5234675A (en) | 1977-03-16 |
JPS608624B2 JPS608624B2 (en) | 1985-03-04 |
Family
ID=14541914
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP50110688A Expired JPS608624B2 (en) | 1975-09-11 | 1975-09-11 | Manufacturing method of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS608624B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57120370A (en) * | 1981-01-19 | 1982-07-27 | Matsushita Electronics Corp | Manufacture of semiconductor device |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4998578A (en) * | 1973-01-22 | 1974-09-18 |
-
1975
- 1975-09-11 JP JP50110688A patent/JPS608624B2/en not_active Expired
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4998578A (en) * | 1973-01-22 | 1974-09-18 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57120370A (en) * | 1981-01-19 | 1982-07-27 | Matsushita Electronics Corp | Manufacture of semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
JPS608624B2 (en) | 1985-03-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS51128268A (en) | Semiconductor unit | |
JPS51127682A (en) | Manufacturing process of semiconductor device | |
JPS53142196A (en) | Bipolar type semiconductor device | |
JPS51147273A (en) | Manufacturing process of semiconductor device | |
JPS5234675A (en) | Manufacturing process of semiconductor device | |
JPS5220769A (en) | Longitudinal semi-conductor unit | |
JPS5235584A (en) | Manufacturing process of semiconductor device | |
JPS5261960A (en) | Production of semiconductor device | |
JPS524789A (en) | Semiconductor equipment | |
JPS5248978A (en) | Process for production of semiconductor device | |
JPS5236983A (en) | Mos type semiconductor integrated circuit device and process for produ ction of same | |
JPS51127685A (en) | Lateral-type semiconductor device | |
JPS534480A (en) | Production of semiconductor device having mis transistors | |
JPS51123071A (en) | Fabrication technique of semiconductor device | |
JPS5286086A (en) | Field effect transistor | |
JPS5376770A (en) | Production of insulated gate field effect transistor | |
JPS5591866A (en) | Manufacture of semiconductor device | |
JPS51135366A (en) | Method of forming electrode film on silicon semiconductor device | |
JPS5258463A (en) | Production of semiconductor device | |
JPS51112266A (en) | Semiconductor device production method | |
JPS5265689A (en) | Semiconductor integrated circuit and its production | |
JPS5233485A (en) | Manufacturing process of semiconductor device | |
JPS5248469A (en) | Process for production of semiconductor device | |
JPS5362984A (en) | Production of semiconductor device | |
JPS5265679A (en) | Semiconductor device |