JPS51135366A - Method of forming electrode film on silicon semiconductor device - Google Patents

Method of forming electrode film on silicon semiconductor device

Info

Publication number
JPS51135366A
JPS51135366A JP50059831A JP5983175A JPS51135366A JP S51135366 A JPS51135366 A JP S51135366A JP 50059831 A JP50059831 A JP 50059831A JP 5983175 A JP5983175 A JP 5983175A JP S51135366 A JPS51135366 A JP S51135366A
Authority
JP
Japan
Prior art keywords
semiconductor device
electrode film
silicon semiconductor
forming electrode
reistance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP50059831A
Other languages
Japanese (ja)
Inventor
Tsukasa Sawaki
Hiroshi Koide
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP50059831A priority Critical patent/JPS51135366A/en
Publication of JPS51135366A publication Critical patent/JPS51135366A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/281—Auxiliary members
    • H10W72/283—Reinforcing structures, e.g. bump collars

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE: To make it possible to form a strong electrode which has a narrow contact window and low contact reistance with respect even to a shallow impurity diffusion film.
COPYRIGHT: (C)1976,JPO&Japio
JP50059831A 1975-05-19 1975-05-19 Method of forming electrode film on silicon semiconductor device Pending JPS51135366A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50059831A JPS51135366A (en) 1975-05-19 1975-05-19 Method of forming electrode film on silicon semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50059831A JPS51135366A (en) 1975-05-19 1975-05-19 Method of forming electrode film on silicon semiconductor device

Publications (1)

Publication Number Publication Date
JPS51135366A true JPS51135366A (en) 1976-11-24

Family

ID=13124552

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50059831A Pending JPS51135366A (en) 1975-05-19 1975-05-19 Method of forming electrode film on silicon semiconductor device

Country Status (1)

Country Link
JP (1) JPS51135366A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60500392A (en) * 1983-01-10 1985-03-22 モ−ビル・ソラ−・エナ−ジ−・コ−ポレ−ション How to manufacture solar cells
JPS62234322A (en) * 1986-04-04 1987-10-14 Nec Corp Manufacture of semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60500392A (en) * 1983-01-10 1985-03-22 モ−ビル・ソラ−・エナ−ジ−・コ−ポレ−ション How to manufacture solar cells
JPS62234322A (en) * 1986-04-04 1987-10-14 Nec Corp Manufacture of semiconductor device

Similar Documents

Publication Publication Date Title
JPS52140280A (en) Semiconductor device
JPS53142196A (en) Bipolar type semiconductor device
JPS5253658A (en) Method of introducing impurity into semiconductor
JPS529379A (en) Semiconductor device manufacturing process
JPS51135366A (en) Method of forming electrode film on silicon semiconductor device
JPS52154367A (en) Production of semiconductor device
JPS5377168A (en) Production of semiconductor device
JPS51118381A (en) Manufacturing process for semiconductor unit
JPS51116675A (en) Manufacturing method for a semiconductor device
JPS51118392A (en) Manuforcturing process for semiconductor unit
JPS5258360A (en) Production of semiconductor device
JPS52130567A (en) Preparation of semiconductor device
JPS51148380A (en) Manufacturing method of electric field semiconductor device
JPS51145267A (en) Manufacture of semiconductor device
JPS5248978A (en) Process for production of semiconductor device
JPS5211765A (en) Method of manufacturing semiconductor device
JPS52144288A (en) Preparation of electrode in semiconductor device
JPS5248469A (en) Process for production of semiconductor device
JPS5211772A (en) Semiconductor device
JPS5321582A (en) Mos type semiconductor device
JPS52146568A (en) Production of silicon gate mos type semiconductor integrated circuit device
JPS5234675A (en) Manufacturing process of semiconductor device
JPS5275268A (en) Method of diffusing impurity into semiconductor
JPS5211867A (en) Manufacturing method of a semiconductor device
JPS5270773A (en) Manufacture of semiconductor device