JPS52130567A - Preparation of semiconductor device - Google Patents

Preparation of semiconductor device

Info

Publication number
JPS52130567A
JPS52130567A JP4737876A JP4737876A JPS52130567A JP S52130567 A JPS52130567 A JP S52130567A JP 4737876 A JP4737876 A JP 4737876A JP 4737876 A JP4737876 A JP 4737876A JP S52130567 A JPS52130567 A JP S52130567A
Authority
JP
Japan
Prior art keywords
semiconductor device
preparation
electrode
contact hole
integration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4737876A
Other languages
Japanese (ja)
Inventor
Shigeharu Horiuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP4737876A priority Critical patent/JPS52130567A/en
Publication of JPS52130567A publication Critical patent/JPS52130567A/en
Pending legal-status Critical Current

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Abstract

PURPOSE: To narrow the interval between a contact hole and an electrode to improve the degree of integration of a semiconductor device by forming a nitride film and an electrode without using photoetching process for the formation of the contact hole.
COPYRIGHT: (C)1977,JPO&Japio
JP4737876A 1976-04-26 1976-04-26 Preparation of semiconductor device Pending JPS52130567A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4737876A JPS52130567A (en) 1976-04-26 1976-04-26 Preparation of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4737876A JPS52130567A (en) 1976-04-26 1976-04-26 Preparation of semiconductor device

Publications (1)

Publication Number Publication Date
JPS52130567A true JPS52130567A (en) 1977-11-01

Family

ID=12773423

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4737876A Pending JPS52130567A (en) 1976-04-26 1976-04-26 Preparation of semiconductor device

Country Status (1)

Country Link
JP (1) JPS52130567A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5658266A (en) * 1979-10-17 1981-05-21 Oki Electric Ind Co Ltd Production of mos type transistor
JPS58147071A (en) * 1981-12-16 1983-09-01 ソーン、イーエムアイ、ノース、アメリカ、インコーポレーテッド Method of producing mos semiconductor device
US5821165A (en) * 1995-06-09 1998-10-13 Nippon Steel Semiconductor Corporation Method of fabricating semiconductor devices

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5658266A (en) * 1979-10-17 1981-05-21 Oki Electric Ind Co Ltd Production of mos type transistor
JPS58147071A (en) * 1981-12-16 1983-09-01 ソーン、イーエムアイ、ノース、アメリカ、インコーポレーテッド Method of producing mos semiconductor device
US5821165A (en) * 1995-06-09 1998-10-13 Nippon Steel Semiconductor Corporation Method of fabricating semiconductor devices

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