JPS5321582A - Mos type semiconductor device - Google Patents

Mos type semiconductor device

Info

Publication number
JPS5321582A
JPS5321582A JP9630976A JP9630976A JPS5321582A JP S5321582 A JPS5321582 A JP S5321582A JP 9630976 A JP9630976 A JP 9630976A JP 9630976 A JP9630976 A JP 9630976A JP S5321582 A JPS5321582 A JP S5321582A
Authority
JP
Japan
Prior art keywords
semiconductor device
type semiconductor
mos type
impurity concentration
super
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9630976A
Other languages
Japanese (ja)
Inventor
Kyohiko Kotani
Satoru Kawazu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP9630976A priority Critical patent/JPS5321582A/en
Publication of JPS5321582A publication Critical patent/JPS5321582A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To obtain a super-high-density LSI which satisfactorily operates down to a short channel length without causing punch-through by forming channel regions with a high impurity concentration semiconductor layer and a low impurity concentration layer of the same conductivity type provided on the surface part thereof.
COPYRIGHT: (C)1978,JPO&Japio
JP9630976A 1976-08-11 1976-08-11 Mos type semiconductor device Pending JPS5321582A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9630976A JPS5321582A (en) 1976-08-11 1976-08-11 Mos type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9630976A JPS5321582A (en) 1976-08-11 1976-08-11 Mos type semiconductor device

Publications (1)

Publication Number Publication Date
JPS5321582A true JPS5321582A (en) 1978-02-28

Family

ID=14161415

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9630976A Pending JPS5321582A (en) 1976-08-11 1976-08-11 Mos type semiconductor device

Country Status (1)

Country Link
JP (1) JPS5321582A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55130171A (en) * 1979-03-29 1980-10-08 Fujitsu Ltd Mos field effect transistor
JPS55134974A (en) * 1979-04-06 1980-10-21 Nec Corp Manufacturing of semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55130171A (en) * 1979-03-29 1980-10-08 Fujitsu Ltd Mos field effect transistor
JPH0465549B2 (en) * 1979-03-29 1992-10-20 Fujitsu Ltd
JPS55134974A (en) * 1979-04-06 1980-10-21 Nec Corp Manufacturing of semiconductor device

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