JPS5321582A - Mos type semiconductor device - Google Patents
Mos type semiconductor deviceInfo
- Publication number
- JPS5321582A JPS5321582A JP9630976A JP9630976A JPS5321582A JP S5321582 A JPS5321582 A JP S5321582A JP 9630976 A JP9630976 A JP 9630976A JP 9630976 A JP9630976 A JP 9630976A JP S5321582 A JPS5321582 A JP S5321582A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- type semiconductor
- mos type
- impurity concentration
- super
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To obtain a super-high-density LSI which satisfactorily operates down to a short channel length without causing punch-through by forming channel regions with a high impurity concentration semiconductor layer and a low impurity concentration layer of the same conductivity type provided on the surface part thereof.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9630976A JPS5321582A (en) | 1976-08-11 | 1976-08-11 | Mos type semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9630976A JPS5321582A (en) | 1976-08-11 | 1976-08-11 | Mos type semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5321582A true JPS5321582A (en) | 1978-02-28 |
Family
ID=14161415
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9630976A Pending JPS5321582A (en) | 1976-08-11 | 1976-08-11 | Mos type semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5321582A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55130171A (en) * | 1979-03-29 | 1980-10-08 | Fujitsu Ltd | Mos field effect transistor |
JPS55134974A (en) * | 1979-04-06 | 1980-10-21 | Nec Corp | Manufacturing of semiconductor device |
-
1976
- 1976-08-11 JP JP9630976A patent/JPS5321582A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55130171A (en) * | 1979-03-29 | 1980-10-08 | Fujitsu Ltd | Mos field effect transistor |
JPH0465549B2 (en) * | 1979-03-29 | 1992-10-20 | Fujitsu Ltd | |
JPS55134974A (en) * | 1979-04-06 | 1980-10-21 | Nec Corp | Manufacturing of semiconductor device |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS52140280A (en) | Semiconductor device | |
JPS52113684A (en) | Semiconductor device | |
JPS5338271A (en) | Semiconductor device | |
JPS5321582A (en) | Mos type semiconductor device | |
JPS5368987A (en) | Semiconductor device | |
JPS538074A (en) | Mis type semiconductor device | |
JPS533075A (en) | Production of mos structure field effect semiconductor device | |
JPS5265686A (en) | Production of mos semiconductor device | |
JPS538072A (en) | Semiconductor device | |
JPS52117582A (en) | Mos type semiconductor device | |
JPS5380172A (en) | Semiconductor device | |
JPS52128084A (en) | Manufacture of semiconductor ic unit | |
JPS5325372A (en) | Mos ty pe semiconductor device | |
JPS52113176A (en) | Semiconductor device | |
JPS52135273A (en) | Mos type semiconductor device | |
JPS52105782A (en) | Semiconductor device | |
JPS52123879A (en) | Mos type semiconductor device and its production | |
JPS5338270A (en) | Semiconductor device | |
JPS5364480A (en) | Field effect semiconductor device | |
JPS5384690A (en) | Field effect transistor | |
JPS52123179A (en) | Mos type semiconductor device and its production | |
JPS52144980A (en) | Sos semiconductor device | |
JPS5396770A (en) | Production of mis transistor | |
JPS5377168A (en) | Production of semiconductor device | |
JPS5255477A (en) | Semiconductor device |