JPS5338271A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5338271A
JPS5338271A JP11337376A JP11337376A JPS5338271A JP S5338271 A JPS5338271 A JP S5338271A JP 11337376 A JP11337376 A JP 11337376A JP 11337376 A JP11337376 A JP 11337376A JP S5338271 A JPS5338271 A JP S5338271A
Authority
JP
Japan
Prior art keywords
semiconductor device
lauers
shallow
impurities
diffusion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11337376A
Other languages
Japanese (ja)
Inventor
Kunihiko Wada
Takashi Matsumoto
Hitoshi Hasegawa
Shigeru Yamaoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP11337376A priority Critical patent/JPS5338271A/en
Publication of JPS5338271A publication Critical patent/JPS5338271A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To form source, drain lauers deep and the portions in contact with channels shallow by using two impurities of varying coefficients of diffusion.
COPYRIGHT: (C)1978,JPO&Japio
JP11337376A 1976-09-21 1976-09-21 Semiconductor device Pending JPS5338271A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11337376A JPS5338271A (en) 1976-09-21 1976-09-21 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11337376A JPS5338271A (en) 1976-09-21 1976-09-21 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5338271A true JPS5338271A (en) 1978-04-08

Family

ID=14610633

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11337376A Pending JPS5338271A (en) 1976-09-21 1976-09-21 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5338271A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55120546U (en) * 1979-02-20 1980-08-26
JPS55113376A (en) * 1979-02-22 1980-09-01 Nec Corp Manufacturing method of semiconductor device
JPS58124227A (en) * 1982-01-20 1983-07-23 Sumitomo Electric Ind Ltd Doping method for impurity to semiconductor crystal
JPS58123722A (en) * 1982-01-19 1983-07-23 Sumitomo Electric Ind Ltd Impurity doping method onto semiconductor crystal
JPS6344767A (en) * 1986-08-12 1988-02-25 Mitsubishi Electric Corp Field effect transistor and manufacture of the same
JPS6344768A (en) * 1986-08-12 1988-02-25 Mitsubishi Electric Corp Field effect transistor and manufacture of the same

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55120546U (en) * 1979-02-20 1980-08-26
JPS55113376A (en) * 1979-02-22 1980-09-01 Nec Corp Manufacturing method of semiconductor device
JPH033387B2 (en) * 1979-02-22 1991-01-18 Nippon Electric Co
JPS58123722A (en) * 1982-01-19 1983-07-23 Sumitomo Electric Ind Ltd Impurity doping method onto semiconductor crystal
JPS58124227A (en) * 1982-01-20 1983-07-23 Sumitomo Electric Ind Ltd Doping method for impurity to semiconductor crystal
JPS6344767A (en) * 1986-08-12 1988-02-25 Mitsubishi Electric Corp Field effect transistor and manufacture of the same
JPS6344768A (en) * 1986-08-12 1988-02-25 Mitsubishi Electric Corp Field effect transistor and manufacture of the same

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