JPS5317284A - Production of semiconductor device - Google Patents

Production of semiconductor device

Info

Publication number
JPS5317284A
JPS5317284A JP9261576A JP9261576A JPS5317284A JP S5317284 A JPS5317284 A JP S5317284A JP 9261576 A JP9261576 A JP 9261576A JP 9261576 A JP9261576 A JP 9261576A JP S5317284 A JPS5317284 A JP S5317284A
Authority
JP
Japan
Prior art keywords
production
semiconductor device
portions
source
mosfets
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9261576A
Other languages
Japanese (ja)
Other versions
JPS5951152B2 (en
Inventor
Atsushi Ueno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP9261576A priority Critical patent/JPS5951152B2/en
Publication of JPS5317284A publication Critical patent/JPS5317284A/en
Publication of JPS5951152B2 publication Critical patent/JPS5951152B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: To obtain MOSFETs of high breakdown voltage by providing thick and thin portions in the poly-Si film of source, drain regions and forming deep portions and shallow portions to source, drain diffused layers by using these.
COPYRIGHT: (C)1978,JPO&Japio
JP9261576A 1976-07-31 1976-07-31 Manufacturing method of semiconductor device Expired JPS5951152B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9261576A JPS5951152B2 (en) 1976-07-31 1976-07-31 Manufacturing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9261576A JPS5951152B2 (en) 1976-07-31 1976-07-31 Manufacturing method of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5317284A true JPS5317284A (en) 1978-02-17
JPS5951152B2 JPS5951152B2 (en) 1984-12-12

Family

ID=14059332

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9261576A Expired JPS5951152B2 (en) 1976-07-31 1976-07-31 Manufacturing method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5951152B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS572519A (en) * 1980-06-05 1982-01-07 Nec Corp Manufacture of semiconductor device
JPS5732674A (en) * 1980-07-08 1982-02-22 Ibm Integrated circuit structure

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS572519A (en) * 1980-06-05 1982-01-07 Nec Corp Manufacture of semiconductor device
JPS5732674A (en) * 1980-07-08 1982-02-22 Ibm Integrated circuit structure
JPH033389B2 (en) * 1980-07-08 1991-01-18 Intaanashonaru Bijinesu Mashiinzu Corp

Also Published As

Publication number Publication date
JPS5951152B2 (en) 1984-12-12

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