JPS55113376A - Manufacturing method of semiconductor device - Google Patents

Manufacturing method of semiconductor device

Info

Publication number
JPS55113376A
JPS55113376A JP2041479A JP2041479A JPS55113376A JP S55113376 A JPS55113376 A JP S55113376A JP 2041479 A JP2041479 A JP 2041479A JP 2041479 A JP2041479 A JP 2041479A JP S55113376 A JPS55113376 A JP S55113376A
Authority
JP
Japan
Prior art keywords
layer
resistance
diffusion layer
film
diffusion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2041479A
Other languages
Japanese (ja)
Other versions
JPH033387B2 (en
Inventor
Zensuke Matsuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP2041479A priority Critical patent/JPS55113376A/en
Publication of JPS55113376A publication Critical patent/JPS55113376A/en
Publication of JPH033387B2 publication Critical patent/JPH033387B2/ja
Granted legal-status Critical Current

Links

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  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: To decrease the resistance of a diffusion layer and to prevent the decrease of current due to the resistance by diffusing impurities into the layer deeper than the depth of the diffusion layer.
CONSTITUTION: An SiO2 film 3, a polycrystalline Si gate 4, n-type source and drain regions are formed by diffusion on p-type secmiconductor substrate 1. Next, hole 9 is made on film 3. Then, gaseous phase grown oxidized film 5, containing impurities having bigger diffusion factor than substrate 1 and having same induction type as diffusion layer 2, is grown. Then, through the hole previously opened, the impurities in film 5 is diffused deeper than the diffusing depth of layer 2 by applying appropriate heat-treatment, and the resistance of layer at this region is decreased. Then hole 7 is opened for the contact connecting the upper electrode and the diffusion layer. Then, upper electrode 6 is formed using a metal of Al or the like. Hereby, the resistance of diffusion layer can be decreased.
COPYRIGHT: (C)1980,JPO&Japio
JP2041479A 1979-02-22 1979-02-22 Manufacturing method of semiconductor device Granted JPS55113376A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2041479A JPS55113376A (en) 1979-02-22 1979-02-22 Manufacturing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2041479A JPS55113376A (en) 1979-02-22 1979-02-22 Manufacturing method of semiconductor device

Publications (2)

Publication Number Publication Date
JPS55113376A true JPS55113376A (en) 1980-09-01
JPH033387B2 JPH033387B2 (en) 1991-01-18

Family

ID=12026371

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2041479A Granted JPS55113376A (en) 1979-02-22 1979-02-22 Manufacturing method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS55113376A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5787174A (en) * 1980-11-20 1982-05-31 Seiko Epson Corp Semiconductor integrated circuit device
JPS58101157U (en) * 1981-12-28 1983-07-09 東洋ゴム工業株式会社 Drive braking characteristics tester

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51108575A (en) * 1975-03-19 1976-09-25 Fujitsu Ltd Handotaisochino seizohoho
JPS5255379A (en) * 1975-10-31 1977-05-06 Toshiba Corp Semiconductor device
JPS5320776A (en) * 1976-08-10 1978-02-25 Mitsubishi Electric Corp Production of metal insulation film semiconductor device
JPS5338271A (en) * 1976-09-21 1978-04-08 Fujitsu Ltd Semiconductor device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51108575A (en) * 1975-03-19 1976-09-25 Fujitsu Ltd Handotaisochino seizohoho
JPS5255379A (en) * 1975-10-31 1977-05-06 Toshiba Corp Semiconductor device
JPS5320776A (en) * 1976-08-10 1978-02-25 Mitsubishi Electric Corp Production of metal insulation film semiconductor device
JPS5338271A (en) * 1976-09-21 1978-04-08 Fujitsu Ltd Semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5787174A (en) * 1980-11-20 1982-05-31 Seiko Epson Corp Semiconductor integrated circuit device
JPS58101157U (en) * 1981-12-28 1983-07-09 東洋ゴム工業株式会社 Drive braking characteristics tester

Also Published As

Publication number Publication date
JPH033387B2 (en) 1991-01-18

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