JPS55113376A - Manufacturing method of semiconductor device - Google Patents
Manufacturing method of semiconductor deviceInfo
- Publication number
- JPS55113376A JPS55113376A JP2041479A JP2041479A JPS55113376A JP S55113376 A JPS55113376 A JP S55113376A JP 2041479 A JP2041479 A JP 2041479A JP 2041479 A JP2041479 A JP 2041479A JP S55113376 A JPS55113376 A JP S55113376A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- resistance
- diffusion layer
- film
- diffusion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE: To decrease the resistance of a diffusion layer and to prevent the decrease of current due to the resistance by diffusing impurities into the layer deeper than the depth of the diffusion layer.
CONSTITUTION: An SiO2 film 3, a polycrystalline Si gate 4, n-type source and drain regions are formed by diffusion on p-type secmiconductor substrate 1. Next, hole 9 is made on film 3. Then, gaseous phase grown oxidized film 5, containing impurities having bigger diffusion factor than substrate 1 and having same induction type as diffusion layer 2, is grown. Then, through the hole previously opened, the impurities in film 5 is diffused deeper than the diffusing depth of layer 2 by applying appropriate heat-treatment, and the resistance of layer at this region is decreased. Then hole 7 is opened for the contact connecting the upper electrode and the diffusion layer. Then, upper electrode 6 is formed using a metal of Al or the like. Hereby, the resistance of diffusion layer can be decreased.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2041479A JPS55113376A (en) | 1979-02-22 | 1979-02-22 | Manufacturing method of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2041479A JPS55113376A (en) | 1979-02-22 | 1979-02-22 | Manufacturing method of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS55113376A true JPS55113376A (en) | 1980-09-01 |
JPH033387B2 JPH033387B2 (en) | 1991-01-18 |
Family
ID=12026371
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2041479A Granted JPS55113376A (en) | 1979-02-22 | 1979-02-22 | Manufacturing method of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55113376A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5787174A (en) * | 1980-11-20 | 1982-05-31 | Seiko Epson Corp | Semiconductor integrated circuit device |
JPS58101157U (en) * | 1981-12-28 | 1983-07-09 | 東洋ゴム工業株式会社 | Drive braking characteristics tester |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51108575A (en) * | 1975-03-19 | 1976-09-25 | Fujitsu Ltd | Handotaisochino seizohoho |
JPS5255379A (en) * | 1975-10-31 | 1977-05-06 | Toshiba Corp | Semiconductor device |
JPS5320776A (en) * | 1976-08-10 | 1978-02-25 | Mitsubishi Electric Corp | Production of metal insulation film semiconductor device |
JPS5338271A (en) * | 1976-09-21 | 1978-04-08 | Fujitsu Ltd | Semiconductor device |
-
1979
- 1979-02-22 JP JP2041479A patent/JPS55113376A/en active Granted
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51108575A (en) * | 1975-03-19 | 1976-09-25 | Fujitsu Ltd | Handotaisochino seizohoho |
JPS5255379A (en) * | 1975-10-31 | 1977-05-06 | Toshiba Corp | Semiconductor device |
JPS5320776A (en) * | 1976-08-10 | 1978-02-25 | Mitsubishi Electric Corp | Production of metal insulation film semiconductor device |
JPS5338271A (en) * | 1976-09-21 | 1978-04-08 | Fujitsu Ltd | Semiconductor device |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5787174A (en) * | 1980-11-20 | 1982-05-31 | Seiko Epson Corp | Semiconductor integrated circuit device |
JPS58101157U (en) * | 1981-12-28 | 1983-07-09 | 東洋ゴム工業株式会社 | Drive braking characteristics tester |
Also Published As
Publication number | Publication date |
---|---|
JPH033387B2 (en) | 1991-01-18 |
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