JPS57111066A - Semiconuctor device - Google Patents
Semiconuctor deviceInfo
- Publication number
- JPS57111066A JPS57111066A JP56179480A JP17948081A JPS57111066A JP S57111066 A JPS57111066 A JP S57111066A JP 56179480 A JP56179480 A JP 56179480A JP 17948081 A JP17948081 A JP 17948081A JP S57111066 A JPS57111066 A JP S57111066A
- Authority
- JP
- Japan
- Prior art keywords
- gate electrode
- source
- ohmic electrodes
- drain
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052751 metal Inorganic materials 0.000 abstract 2
- 239000002184 metal Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 abstract 2
- 229910021342 tungsten silicide Inorganic materials 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052785 arsenic Inorganic materials 0.000 abstract 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910021332 silicide Inorganic materials 0.000 abstract 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract 1
- 229910052721 tungsten Inorganic materials 0.000 abstract 1
- 239000010937 tungsten Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To prevent generation of short-circuit between a gate electrode and source and drain electrodes, and to reduce floating capacity at an MISFET having the metal gate electrode doped with impurities by a method wherein the source and drain ohmic electrodes are constituted of a metal silicide dopes with impurites, and a part thereof is buried in a substrate. CONSTITUTION:An opening 13 for diffusion is provided selectively in the SiO2 film 11 covered on an Si substrate 12, and tungsten 14 containing arsenic is adhered thereon. When it is heat treated, it is converted into tungsten silicide 15, and the silicon diffuses to form a P-N junction part 16. Accordingly short-circuit between an ohmic electrodes and a gate electrode can be prevented and floting capacity can be reduced by forming the source and drain ohmic electrodes with the tungsten silicide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56179480A JPS57111066A (en) | 1981-11-09 | 1981-11-09 | Semiconuctor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56179480A JPS57111066A (en) | 1981-11-09 | 1981-11-09 | Semiconuctor device |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8528872A Division JPS567304B2 (en) | 1972-08-28 | 1972-08-28 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57111066A true JPS57111066A (en) | 1982-07-10 |
| JPS5753674B2 JPS5753674B2 (en) | 1982-11-13 |
Family
ID=16066572
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56179480A Granted JPS57111066A (en) | 1981-11-09 | 1981-11-09 | Semiconuctor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57111066A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59177926A (en) * | 1983-03-28 | 1984-10-08 | Nec Corp | Manufacture of semiconductor device |
| US4558507A (en) * | 1982-11-12 | 1985-12-17 | Nec Corporation | Method of manufacturing semiconductor device |
| JPS61225838A (en) * | 1985-03-29 | 1986-10-07 | Fujitsu Ltd | Forming method for electrode wirings |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5993170U (en) * | 1982-12-15 | 1984-06-25 | 三洋電機株式会社 | Mounting structure of flat package IC |
| JPS62106691A (en) * | 1985-11-05 | 1987-05-18 | 松下電工株式会社 | Wiring board |
| JPH02347A (en) * | 1989-03-24 | 1990-01-05 | Matsushita Electric Works Ltd | Ship carrier for electronic parts chip |
| JPH06334078A (en) * | 1993-05-26 | 1994-12-02 | Iwaki Electron Corp Ltd | Heat plate for element |
-
1981
- 1981-11-09 JP JP56179480A patent/JPS57111066A/en active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4558507A (en) * | 1982-11-12 | 1985-12-17 | Nec Corporation | Method of manufacturing semiconductor device |
| JPS59177926A (en) * | 1983-03-28 | 1984-10-08 | Nec Corp | Manufacture of semiconductor device |
| JPS61225838A (en) * | 1985-03-29 | 1986-10-07 | Fujitsu Ltd | Forming method for electrode wirings |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5753674B2 (en) | 1982-11-13 |
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