JPS5339083A - Production of silicon gate mis semiconductor device - Google Patents
Production of silicon gate mis semiconductor deviceInfo
- Publication number
- JPS5339083A JPS5339083A JP11312176A JP11312176A JPS5339083A JP S5339083 A JPS5339083 A JP S5339083A JP 11312176 A JP11312176 A JP 11312176A JP 11312176 A JP11312176 A JP 11312176A JP S5339083 A JPS5339083 A JP S5339083A
- Authority
- JP
- Japan
- Prior art keywords
- production
- semiconductor device
- silicon gate
- mis semiconductor
- gate mis
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To obtain diffused layer wirings of low resistance and source drain and avert the variation in threshold voltage and the degradation in characteristics by making the impurity concentration to be doped to polycrystalline Si film for gate electrodes on a gate insulation film smaller than the impurity concentration to be contained in source and drain diffused layers.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11312176A JPS5339083A (en) | 1976-09-22 | 1976-09-22 | Production of silicon gate mis semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11312176A JPS5339083A (en) | 1976-09-22 | 1976-09-22 | Production of silicon gate mis semiconductor device |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17293983A Division JPS59103379A (en) | 1983-09-21 | 1983-09-21 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5339083A true JPS5339083A (en) | 1978-04-10 |
Family
ID=14604043
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11312176A Pending JPS5339083A (en) | 1976-09-22 | 1976-09-22 | Production of silicon gate mis semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5339083A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6057972A (en) * | 1983-09-09 | 1985-04-03 | Toshiba Corp | Insulated gate field effect transistor |
-
1976
- 1976-09-22 JP JP11312176A patent/JPS5339083A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6057972A (en) * | 1983-09-09 | 1985-04-03 | Toshiba Corp | Insulated gate field effect transistor |
JPH053147B2 (en) * | 1983-09-09 | 1993-01-14 | Tokyo Shibaura Electric Co |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5457875A (en) | Semiconductor nonvolatile memory device | |
JPS55151363A (en) | Mos semiconductor device and fabricating method of the same | |
JPS5633881A (en) | Manufacture of semiconductor device | |
JPS5339083A (en) | Production of silicon gate mis semiconductor device | |
JPS5626471A (en) | Mos type semiconductor device | |
JPS5448179A (en) | Mis-type semiconductor integrated circuit device | |
JPS5263686A (en) | Non-voltatile semiconductor memory device | |
JPS5342567A (en) | Semiconductor device and its production | |
JPS5286086A (en) | Field effect transistor | |
JPS52146568A (en) | Production of silicon gate mos type semiconductor integrated circuit device | |
JPS52147983A (en) | Insulation gate type semiconductor device | |
JPS5350985A (en) | Semiconductor memory device | |
JPS52123878A (en) | Mos type semiconductor device and its production process | |
JPS5552254A (en) | Semiconductor device | |
JPS5317284A (en) | Production of semiconductor device | |
JPS52144980A (en) | Sos semiconductor device | |
JPS5354989A (en) | Semiconductor device | |
JPS5491069A (en) | Mos field effect transistor | |
JPS55166966A (en) | Semiconductor device | |
JPS5245282A (en) | Manufacturing method of field effect transistor of silicon gate type | |
JPS577968A (en) | Semiconductor device | |
JPS56101758A (en) | Semiconductor device | |
JPS5586146A (en) | Mos dynamic memory element | |
JPS5753958A (en) | Semiconductor device | |
JPS5493980A (en) | Field-effect semicoductor device |