JPS5339083A - Production of silicon gate mis semiconductor device - Google Patents

Production of silicon gate mis semiconductor device

Info

Publication number
JPS5339083A
JPS5339083A JP11312176A JP11312176A JPS5339083A JP S5339083 A JPS5339083 A JP S5339083A JP 11312176 A JP11312176 A JP 11312176A JP 11312176 A JP11312176 A JP 11312176A JP S5339083 A JPS5339083 A JP S5339083A
Authority
JP
Japan
Prior art keywords
production
semiconductor device
silicon gate
mis semiconductor
gate mis
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11312176A
Other languages
Japanese (ja)
Inventor
Norio Anzai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP11312176A priority Critical patent/JPS5339083A/en
Publication of JPS5339083A publication Critical patent/JPS5339083A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To obtain diffused layer wirings of low resistance and source drain and avert the variation in threshold voltage and the degradation in characteristics by making the impurity concentration to be doped to polycrystalline Si film for gate electrodes on a gate insulation film smaller than the impurity concentration to be contained in source and drain diffused layers.
COPYRIGHT: (C)1978,JPO&Japio
JP11312176A 1976-09-22 1976-09-22 Production of silicon gate mis semiconductor device Pending JPS5339083A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11312176A JPS5339083A (en) 1976-09-22 1976-09-22 Production of silicon gate mis semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11312176A JPS5339083A (en) 1976-09-22 1976-09-22 Production of silicon gate mis semiconductor device

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP17293983A Division JPS59103379A (en) 1983-09-21 1983-09-21 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5339083A true JPS5339083A (en) 1978-04-10

Family

ID=14604043

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11312176A Pending JPS5339083A (en) 1976-09-22 1976-09-22 Production of silicon gate mis semiconductor device

Country Status (1)

Country Link
JP (1) JPS5339083A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6057972A (en) * 1983-09-09 1985-04-03 Toshiba Corp Insulated gate field effect transistor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6057972A (en) * 1983-09-09 1985-04-03 Toshiba Corp Insulated gate field effect transistor
JPH053147B2 (en) * 1983-09-09 1993-01-14 Tokyo Shibaura Electric Co

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