JPS577968A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS577968A JPS577968A JP8209580A JP8209580A JPS577968A JP S577968 A JPS577968 A JP S577968A JP 8209580 A JP8209580 A JP 8209580A JP 8209580 A JP8209580 A JP 8209580A JP S577968 A JPS577968 A JP S577968A
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- oxide film
- high concentration
- diffusion layers
- oxide films
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 5
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 3
- 229910052796 boron Inorganic materials 0.000 abstract 3
- 238000009792 diffusion process Methods 0.000 abstract 3
- 229910052710 silicon Inorganic materials 0.000 abstract 3
- 239000010703 silicon Substances 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract 2
- 230000001590 oxidative effect Effects 0.000 abstract 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 2
- 239000003990 capacitor Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE:To obtain stable yield of a semiconductor device by a method wherein silicon oxide films, etc., for a gate oxide film or a dielectric layer of the capacitor element of a P channel MOS transistor are formed with single crystal silicon and polycrystalline silicon. CONSTITUTION:High concentration boron diffusion layers 32a, 32b are formed on an N type silicon substrate 31, and field oxide films 33a, 33b are formed on the high concentration boron diffusion layers 32a, 32b and N type silicon substrate 31. The silicon oxide film 34 obtained by oxidizing single crystal silicon is formed on the N type silicon substrate 31 and the high concentration boron diffusion layers 32a, 32b between the field oxide film 33a, 33b. Moreover the silicon oxide films 35 obtained by oxidizing polycrystalline silicon are formed on the silicon oxide film 34 and field oxide films 33a, 33b. A gate electrode 36 of the P channel MOS transistor is formed on the silicon oxide film 35.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8209580A JPS577968A (en) | 1980-06-19 | 1980-06-19 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8209580A JPS577968A (en) | 1980-06-19 | 1980-06-19 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS577968A true JPS577968A (en) | 1982-01-16 |
Family
ID=13764860
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8209580A Pending JPS577968A (en) | 1980-06-19 | 1980-06-19 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS577968A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59174418A (en) * | 1983-03-17 | 1984-10-02 | 日魯工業株式会社 | Packing band type packer |
| JPS644281U (en) * | 1987-06-30 | 1989-01-11 |
-
1980
- 1980-06-19 JP JP8209580A patent/JPS577968A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59174418A (en) * | 1983-03-17 | 1984-10-02 | 日魯工業株式会社 | Packing band type packer |
| JPS644281U (en) * | 1987-06-30 | 1989-01-11 |
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