JPS5521102A - Semiconductor memory cell - Google Patents

Semiconductor memory cell

Info

Publication number
JPS5521102A
JPS5521102A JP9314278A JP9314278A JPS5521102A JP S5521102 A JPS5521102 A JP S5521102A JP 9314278 A JP9314278 A JP 9314278A JP 9314278 A JP9314278 A JP 9314278A JP S5521102 A JPS5521102 A JP S5521102A
Authority
JP
Japan
Prior art keywords
region
drain
memory cell
electrode
semiconductor memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9314278A
Other languages
Japanese (ja)
Inventor
Noboru Okuyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP9314278A priority Critical patent/JPS5521102A/en
Publication of JPS5521102A publication Critical patent/JPS5521102A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/34—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the transistor being at least partially in a trench in the substrate

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To make the planar shape of a transistor small and to prevent occurrence of a short channel phenomenon by forming drain and channel regions in a rectangular concave region formed on the substance. CONSTITUTION:A rectangular concave region 26 is formed on a main face of a semiconductor substrate 20 consisting of one conduction type, an impurity diffusion region 30 consisting of other conduction type is formed as a drain region along the region 26, and a capacitor C including the substance 20, insulation film 23, polycrystal silicon 24 is formed on the upper face along the region 26. An inversion layer 33 induced at the same time is formed as a source region 33', the concave slot between the drain and source regions is formed as a channel region, a gate insulation film 27 is formed thereon, a gate electrode and capacitor electrode are formed of a polycrystal silicon 28 and further a wiring electrode 32 connected to the capacitor electrode is formed thereon to constitute a semiconductor memory cell.
JP9314278A 1978-08-01 1978-08-01 Semiconductor memory cell Pending JPS5521102A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9314278A JPS5521102A (en) 1978-08-01 1978-08-01 Semiconductor memory cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9314278A JPS5521102A (en) 1978-08-01 1978-08-01 Semiconductor memory cell

Publications (1)

Publication Number Publication Date
JPS5521102A true JPS5521102A (en) 1980-02-15

Family

ID=14074267

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9314278A Pending JPS5521102A (en) 1978-08-01 1978-08-01 Semiconductor memory cell

Country Status (1)

Country Link
JP (1) JPS5521102A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57126954A (en) * 1981-01-29 1982-08-06 Nisshin Steel Co Ltd Corrosion-resistant ferritic stainless steel
JPS5861220A (en) * 1981-10-09 1983-04-12 Sumitomo Metal Ind Ltd Ferrite stainless steel with superior rust resistance
JPS5965466A (en) * 1982-10-05 1984-04-13 Matsushita Electronics Corp Semiconductor memory device
US5075745A (en) * 1987-12-11 1991-12-24 Oki Electric Industry Co., Ltd. Capacitor cell for use in a semiconductor memory integrated circuit device
JPH05112859A (en) * 1991-04-26 1993-05-07 Nippon Steel Corp Automobile exhaust system aluminum plated stainless steel excellent in corrosion resistance
WO2010090041A1 (en) 2009-02-09 2010-08-12 新日鐵住金ステンレス株式会社 Ferrite stainless steel with low black spot generation

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57126954A (en) * 1981-01-29 1982-08-06 Nisshin Steel Co Ltd Corrosion-resistant ferritic stainless steel
JPH021902B2 (en) * 1981-01-29 1990-01-16 Nisshin Steel Co Ltd
JPS5861220A (en) * 1981-10-09 1983-04-12 Sumitomo Metal Ind Ltd Ferrite stainless steel with superior rust resistance
JPS6325052B2 (en) * 1981-10-09 1988-05-24 Sumitomo Kinzoku Kogyo Kk
JPS5965466A (en) * 1982-10-05 1984-04-13 Matsushita Electronics Corp Semiconductor memory device
JPH0437590B2 (en) * 1982-10-05 1992-06-19 Matsushita Electronics Corp
US5075745A (en) * 1987-12-11 1991-12-24 Oki Electric Industry Co., Ltd. Capacitor cell for use in a semiconductor memory integrated circuit device
JPH05112859A (en) * 1991-04-26 1993-05-07 Nippon Steel Corp Automobile exhaust system aluminum plated stainless steel excellent in corrosion resistance
WO2010090041A1 (en) 2009-02-09 2010-08-12 新日鐵住金ステンレス株式会社 Ferrite stainless steel with low black spot generation
US8894924B2 (en) 2009-02-09 2014-11-25 Nippon Steel & Sumikin Stainless Steel Corporation Ferrite stainless steel with low black spot generation

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