JPS53112687A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS53112687A
JPS53112687A JP2698577A JP2698577A JPS53112687A JP S53112687 A JPS53112687 A JP S53112687A JP 2698577 A JP2698577 A JP 2698577A JP 2698577 A JP2698577 A JP 2698577A JP S53112687 A JPS53112687 A JP S53112687A
Authority
JP
Japan
Prior art keywords
semiconductor device
forming
memory cell
cell part
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2698577A
Other languages
Japanese (ja)
Inventor
Hiroshi Matsui
Masayoshi Ino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP2698577A priority Critical patent/JPS53112687A/en
Publication of JPS53112687A publication Critical patent/JPS53112687A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor

Landscapes

  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To form the MOS type IC memory with high density and high performance, by forming the transistor gate electrode of the transfer electrode at the memory cell part and the peripheral circuit with the first layer polycrystal Si and by forming the capacitor electrode at the memory cell part with the second layer polycrystal Si.
JP2698577A 1977-03-14 1977-03-14 Semiconductor device Pending JPS53112687A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2698577A JPS53112687A (en) 1977-03-14 1977-03-14 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2698577A JPS53112687A (en) 1977-03-14 1977-03-14 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS53112687A true JPS53112687A (en) 1978-10-02

Family

ID=12208448

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2698577A Pending JPS53112687A (en) 1977-03-14 1977-03-14 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS53112687A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55151361A (en) * 1979-05-16 1980-11-25 Chiyou Lsi Gijutsu Kenkyu Kumiai Fabricating method of semiconductor device
FR2494483A1 (en) * 1980-11-17 1982-05-21 Philips Nv METHOD FOR PRODUCING A SEMICONDUCTOR MEMORY, EACH ELEMENT OF WHICH HAS A CAPACITOR AND A FIELD EFFECT TRANSISTOR, AND MEMORY THUS PRODUCED
FR2494482A1 (en) * 1980-11-17 1982-05-21 Philips Nv METHOD OF MAKING A SEMICONDUCTOR MEMORY OF EACH ELEMENT COMPRISING A CAPACITOR AND A FIELD EFFECT TRANSISTOR, AND A MEMORY THUS REALIZED
JPS57114272A (en) * 1981-01-06 1982-07-16 Nec Corp Semiconductor memory
JPS6323346A (en) * 1987-04-20 1988-01-30 Hitachi Ltd Semiconductor memory device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55151361A (en) * 1979-05-16 1980-11-25 Chiyou Lsi Gijutsu Kenkyu Kumiai Fabricating method of semiconductor device
FR2494483A1 (en) * 1980-11-17 1982-05-21 Philips Nv METHOD FOR PRODUCING A SEMICONDUCTOR MEMORY, EACH ELEMENT OF WHICH HAS A CAPACITOR AND A FIELD EFFECT TRANSISTOR, AND MEMORY THUS PRODUCED
FR2494482A1 (en) * 1980-11-17 1982-05-21 Philips Nv METHOD OF MAKING A SEMICONDUCTOR MEMORY OF EACH ELEMENT COMPRISING A CAPACITOR AND A FIELD EFFECT TRANSISTOR, AND A MEMORY THUS REALIZED
JPS57114272A (en) * 1981-01-06 1982-07-16 Nec Corp Semiconductor memory
JPS6323346A (en) * 1987-04-20 1988-01-30 Hitachi Ltd Semiconductor memory device

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