JPS5228277A - Non-voltatile semiconductor memory device - Google Patents

Non-voltatile semiconductor memory device

Info

Publication number
JPS5228277A
JPS5228277A JP10424075A JP10424075A JPS5228277A JP S5228277 A JPS5228277 A JP S5228277A JP 10424075 A JP10424075 A JP 10424075A JP 10424075 A JP10424075 A JP 10424075A JP S5228277 A JPS5228277 A JP S5228277A
Authority
JP
Japan
Prior art keywords
voltatile
memory device
semiconductor memory
writing
shorter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10424075A
Other languages
Japanese (ja)
Inventor
Hisakazu Iizuka
Katsuichi Mimura
Makoto Omura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP10424075A priority Critical patent/JPS5228277A/en
Publication of JPS5228277A publication Critical patent/JPS5228277A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/788Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881Programmable transistors with only two possible levels of programmation
    • H01L29/7884Programmable transistors with only two possible levels of programmation charging by hot carrier injection
    • H01L29/7886Hot carrier produced by avalanche breakdown of a PN junction, e.g. FAMOS

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Non-Volatile Memory (AREA)

Abstract

PURPOSE:To lower the voltage of writing and shorter the time of writing by forming a P<+> layer contacted with a drain region on the channel region of P type substrate.
JP10424075A 1975-08-28 1975-08-28 Non-voltatile semiconductor memory device Pending JPS5228277A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10424075A JPS5228277A (en) 1975-08-28 1975-08-28 Non-voltatile semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10424075A JPS5228277A (en) 1975-08-28 1975-08-28 Non-voltatile semiconductor memory device

Publications (1)

Publication Number Publication Date
JPS5228277A true JPS5228277A (en) 1977-03-03

Family

ID=14375421

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10424075A Pending JPS5228277A (en) 1975-08-28 1975-08-28 Non-voltatile semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS5228277A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS584367A (en) * 1981-06-30 1983-01-11 油谷鉄工株式会社 Motor tool which can detect angle of revolution after predetermined torque
JPS5893473U (en) * 1981-12-16 1983-06-24 株式会社小松製作所 Fastener tightening device
JPS58153479U (en) * 1982-04-06 1983-10-14 日本マランツ株式会社 Display device for electronic equipment
JPS6011768U (en) * 1983-06-30 1985-01-26 マツダ株式会社 nut tightening device
US4665418A (en) * 1983-01-10 1987-05-12 Tokyo Shibaura Denki Kabushiki Kaisha Semiconductor memory device
JPH0951044A (en) * 1995-08-09 1997-02-18 Nec Corp Involatile semiconductor storage device and its production

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4847280A (en) * 1971-10-15 1973-07-05

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4847280A (en) * 1971-10-15 1973-07-05

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS584367A (en) * 1981-06-30 1983-01-11 油谷鉄工株式会社 Motor tool which can detect angle of revolution after predetermined torque
JPS6047070B2 (en) * 1981-06-30 1985-10-19 油谷鉄工株式会社 A power tool that can detect the rotation angle after a certain torque
JPS5893473U (en) * 1981-12-16 1983-06-24 株式会社小松製作所 Fastener tightening device
JPS58153479U (en) * 1982-04-06 1983-10-14 日本マランツ株式会社 Display device for electronic equipment
JPS6325753Y2 (en) * 1982-04-06 1988-07-13
US4665418A (en) * 1983-01-10 1987-05-12 Tokyo Shibaura Denki Kabushiki Kaisha Semiconductor memory device
JPS6011768U (en) * 1983-06-30 1985-01-26 マツダ株式会社 nut tightening device
JPS646206Y2 (en) * 1983-06-30 1989-02-16
JPH0951044A (en) * 1995-08-09 1997-02-18 Nec Corp Involatile semiconductor storage device and its production

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