JPS5357771A - Non-volatile memory transistor - Google Patents

Non-volatile memory transistor

Info

Publication number
JPS5357771A
JPS5357771A JP13258176A JP13258176A JPS5357771A JP S5357771 A JPS5357771 A JP S5357771A JP 13258176 A JP13258176 A JP 13258176A JP 13258176 A JP13258176 A JP 13258176A JP S5357771 A JPS5357771 A JP S5357771A
Authority
JP
Japan
Prior art keywords
volatile memory
memory transistor
increasing
prolonging
threshold voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13258176A
Other languages
Japanese (ja)
Other versions
JPS5924547B2 (en
Inventor
Hidenobu Mochizuki
Koji Otsu
Takashi Shimada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP13258176A priority Critical patent/JPS5924547B2/en
Publication of JPS5357771A publication Critical patent/JPS5357771A/en
Publication of JPS5924547B2 publication Critical patent/JPS5924547B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Non-Volatile Memory (AREA)

Abstract

PURPOSE:A non-volatile memory transistor of high reliability is obtained by increasing the change amount V th of a threshold voltage V th thereby prolonging the holding time of memory and simultaneously increasing the dielectric strength of a gate insulation layer.
JP13258176A 1976-11-04 1976-11-04 nonvolatile memory transistor Expired JPS5924547B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13258176A JPS5924547B2 (en) 1976-11-04 1976-11-04 nonvolatile memory transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13258176A JPS5924547B2 (en) 1976-11-04 1976-11-04 nonvolatile memory transistor

Publications (2)

Publication Number Publication Date
JPS5357771A true JPS5357771A (en) 1978-05-25
JPS5924547B2 JPS5924547B2 (en) 1984-06-09

Family

ID=15084666

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13258176A Expired JPS5924547B2 (en) 1976-11-04 1976-11-04 nonvolatile memory transistor

Country Status (1)

Country Link
JP (1) JPS5924547B2 (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57186369A (en) * 1981-05-13 1982-11-16 Nec Corp Semiconductor device
JPS5867072A (en) * 1981-10-16 1983-04-21 Nec Corp Manufacture of semiconductor device
JPS58502126A (en) * 1981-12-14 1983-12-08 エヌ・シー・アール・インターナショナル・インコーポレイテッド Non-volatile semiconductor memory device and its manufacturing method
JPS62230059A (en) * 1986-03-31 1987-10-08 Semiconductor Energy Lab Co Ltd Formation of semiconductor storage device
JPS6442867A (en) * 1987-08-10 1989-02-15 Nec Yamagata Ltd Mis-type nonvolatile memory and manufacture thereof
JPS6459960A (en) * 1987-08-31 1989-03-07 Agency Ind Science Techn Nonvolatile semiconductor memory element
WO2003021666A1 (en) * 2001-08-28 2003-03-13 Renesas Technology Corp. Nonvolatile storage device and semiconductor integrated circuit
US7851296B2 (en) 2007-03-23 2010-12-14 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile semiconductor memory device
US7999308B2 (en) 2007-08-31 2011-08-16 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile semiconductor memory element with silicon nitride charge trapping film having varying hydrogen concentration

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57186369A (en) * 1981-05-13 1982-11-16 Nec Corp Semiconductor device
JPS5867072A (en) * 1981-10-16 1983-04-21 Nec Corp Manufacture of semiconductor device
JPH0313758B2 (en) * 1981-10-16 1991-02-25 Nippon Electric Co
JPS58502126A (en) * 1981-12-14 1983-12-08 エヌ・シー・アール・インターナショナル・インコーポレイテッド Non-volatile semiconductor memory device and its manufacturing method
JPS62230059A (en) * 1986-03-31 1987-10-08 Semiconductor Energy Lab Co Ltd Formation of semiconductor storage device
JPS6442867A (en) * 1987-08-10 1989-02-15 Nec Yamagata Ltd Mis-type nonvolatile memory and manufacture thereof
JPS6459960A (en) * 1987-08-31 1989-03-07 Agency Ind Science Techn Nonvolatile semiconductor memory element
WO2003021666A1 (en) * 2001-08-28 2003-03-13 Renesas Technology Corp. Nonvolatile storage device and semiconductor integrated circuit
US7851296B2 (en) 2007-03-23 2010-12-14 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile semiconductor memory device
US8350313B2 (en) 2007-03-23 2013-01-08 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile memory transistor
US7999308B2 (en) 2007-08-31 2011-08-16 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile semiconductor memory element with silicon nitride charge trapping film having varying hydrogen concentration
US8329536B2 (en) 2007-08-31 2012-12-11 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device with silicon nitride charge trapping film having varying hydrogen concentration

Also Published As

Publication number Publication date
JPS5924547B2 (en) 1984-06-09

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