JPS51117838A - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number
JPS51117838A
JPS51117838A JP4354275A JP4354275A JPS51117838A JP S51117838 A JPS51117838 A JP S51117838A JP 4354275 A JP4354275 A JP 4354275A JP 4354275 A JP4354275 A JP 4354275A JP S51117838 A JPS51117838 A JP S51117838A
Authority
JP
Japan
Prior art keywords
memory device
semiconductor memory
write
gate
erase
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4354275A
Other languages
Japanese (ja)
Inventor
Naomi Kojima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shindengen Electric Manufacturing Co Ltd
Original Assignee
Shindengen Electric Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shindengen Electric Manufacturing Co Ltd filed Critical Shindengen Electric Manufacturing Co Ltd
Priority to JP4354275A priority Critical patent/JPS51117838A/en
Publication of JPS51117838A publication Critical patent/JPS51117838A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • H01L29/7883—Programmable transistors with only two possible levels of programmation charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
  • Non-Volatile Memory (AREA)

Abstract

PURPOSE:A control gate and write gate which are mutually insulated are provided on a floating gate opposing each other through a dielectric material, and write and erase of information is done by a voltage of one kind of polarity.
JP4354275A 1975-04-10 1975-04-10 Semiconductor memory device Pending JPS51117838A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4354275A JPS51117838A (en) 1975-04-10 1975-04-10 Semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4354275A JPS51117838A (en) 1975-04-10 1975-04-10 Semiconductor memory device

Publications (1)

Publication Number Publication Date
JPS51117838A true JPS51117838A (en) 1976-10-16

Family

ID=12666618

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4354275A Pending JPS51117838A (en) 1975-04-10 1975-04-10 Semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS51117838A (en)

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5342686A (en) * 1976-09-29 1978-04-18 Siemens Ag Nnchannel fet memory
JPS5710977A (en) * 1980-05-27 1982-01-20 Ibm Semiconductor circuit
JPS5759387A (en) * 1980-09-26 1982-04-09 Toshiba Corp Semiconductor storage device
JPS5792868A (en) * 1980-10-06 1982-06-09 Siemens Ag Method of producing integrated 2-transistor memory cell
JPS5793577A (en) * 1980-12-03 1982-06-10 Mitsubishi Electric Corp Insulated gate type transistor
JPS57130473A (en) * 1981-02-05 1982-08-12 Seiko Epson Corp Mos type semiconductor memory storage
JPS57157573A (en) * 1981-03-25 1982-09-29 Fujitsu Ltd Semiconductor non-volatile memory cell
JPS57162371A (en) * 1981-03-30 1982-10-06 Seiko Epson Corp Mos semiconductor memory device
JPS57180181A (en) * 1981-04-30 1982-11-06 Nec Corp Mos type semiconductor device and manufacturing method therefor
JPS57199264A (en) * 1981-06-03 1982-12-07 Toshiba Corp Semiconductor memory
JPS58169959A (en) * 1982-01-29 1983-10-06 シ−ク・テクノロジ−・インコ−ポレ−テツド Electrically programmable and erasable mos memory device
JPS59155967A (en) * 1983-02-25 1984-09-05 Toshiba Corp Semiconductor memory device
WO1985003798A1 (en) 1984-02-17 1985-08-29 Hughes Aircraft Company Nonvolatile latch
JPS61208865A (en) * 1985-03-13 1986-09-17 Mitsubishi Electric Corp Semiconductor memory
JPS61225862A (en) * 1985-03-30 1986-10-07 Toshiba Corp Semiconductor memory device
JPS61225860A (en) * 1985-03-30 1986-10-07 Toshiba Corp Semiconductor memory device
JPH07288291A (en) * 1994-04-19 1995-10-31 Nec Corp Non-volatile semiconductor memory device

Cited By (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5342686A (en) * 1976-09-29 1978-04-18 Siemens Ag Nnchannel fet memory
JPS5710977A (en) * 1980-05-27 1982-01-20 Ibm Semiconductor circuit
JPH0130313B2 (en) * 1980-05-27 1989-06-19 Intaanashonaru Bijinesu Mashiinzu Corp
JPS5759387A (en) * 1980-09-26 1982-04-09 Toshiba Corp Semiconductor storage device
JPS6362113B2 (en) * 1980-09-26 1988-12-01
JPS5792868A (en) * 1980-10-06 1982-06-09 Siemens Ag Method of producing integrated 2-transistor memory cell
JPS5793577A (en) * 1980-12-03 1982-06-10 Mitsubishi Electric Corp Insulated gate type transistor
JPS57130473A (en) * 1981-02-05 1982-08-12 Seiko Epson Corp Mos type semiconductor memory storage
JPS57157573A (en) * 1981-03-25 1982-09-29 Fujitsu Ltd Semiconductor non-volatile memory cell
JPS57162371A (en) * 1981-03-30 1982-10-06 Seiko Epson Corp Mos semiconductor memory device
JPS57180181A (en) * 1981-04-30 1982-11-06 Nec Corp Mos type semiconductor device and manufacturing method therefor
JPS57199264A (en) * 1981-06-03 1982-12-07 Toshiba Corp Semiconductor memory
JPH0130314B2 (en) * 1981-06-03 1989-06-19 Tokyo Shibaura Electric Co
JPS58169959A (en) * 1982-01-29 1983-10-06 シ−ク・テクノロジ−・インコ−ポレ−テツド Electrically programmable and erasable mos memory device
JPS59155967A (en) * 1983-02-25 1984-09-05 Toshiba Corp Semiconductor memory device
WO1985003798A1 (en) 1984-02-17 1985-08-29 Hughes Aircraft Company Nonvolatile latch
JPS61208865A (en) * 1985-03-13 1986-09-17 Mitsubishi Electric Corp Semiconductor memory
JPS61225862A (en) * 1985-03-30 1986-10-07 Toshiba Corp Semiconductor memory device
JPS61225860A (en) * 1985-03-30 1986-10-07 Toshiba Corp Semiconductor memory device
JPH0560267B2 (en) * 1985-03-30 1993-09-01 Tokyo Shibaura Electric Co
JPH07288291A (en) * 1994-04-19 1995-10-31 Nec Corp Non-volatile semiconductor memory device

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