JPS5236475A - Non-volatile semiconductor memory - Google Patents

Non-volatile semiconductor memory

Info

Publication number
JPS5236475A
JPS5236475A JP11304175A JP11304175A JPS5236475A JP S5236475 A JPS5236475 A JP S5236475A JP 11304175 A JP11304175 A JP 11304175A JP 11304175 A JP11304175 A JP 11304175A JP S5236475 A JPS5236475 A JP S5236475A
Authority
JP
Japan
Prior art keywords
semiconductor memory
volatile semiconductor
pair
different sizes
reading operation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11304175A
Other languages
Japanese (ja)
Other versions
JPS5634106B2 (en
Inventor
Yasuki Rai
Terutoshi Sasami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP11304175A priority Critical patent/JPS5236475A/en
Publication of JPS5236475A publication Critical patent/JPS5236475A/en
Publication of JPS5634106B2 publication Critical patent/JPS5634106B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Non-Volatile Memory (AREA)

Abstract

PURPOSE:To provide a pair of control electrodes with different sizes on a secondary insulating matter, thereby permitting writing and reading operation to be performed easily.
JP11304175A 1975-09-17 1975-09-17 Non-volatile semiconductor memory Granted JPS5236475A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11304175A JPS5236475A (en) 1975-09-17 1975-09-17 Non-volatile semiconductor memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11304175A JPS5236475A (en) 1975-09-17 1975-09-17 Non-volatile semiconductor memory

Publications (2)

Publication Number Publication Date
JPS5236475A true JPS5236475A (en) 1977-03-19
JPS5634106B2 JPS5634106B2 (en) 1981-08-07

Family

ID=14601975

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11304175A Granted JPS5236475A (en) 1975-09-17 1975-09-17 Non-volatile semiconductor memory

Country Status (1)

Country Link
JP (1) JPS5236475A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58203697A (en) * 1982-05-20 1983-11-28 Toshiba Corp Semiconductor storage device
JPH0770626B2 (en) * 1984-10-29 1995-07-31 エイ・ティ・アンド・ティ グローバル インフォメーション ソルーションズ インターナショナル インコーポレイテッド Non-volatile memory cell
US5739568A (en) * 1994-11-28 1998-04-14 Motorola, Inc. Non-volatile memory having a cell applying to multi-bit data by double layered floating gate architecture and programming method for the same

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58203697A (en) * 1982-05-20 1983-11-28 Toshiba Corp Semiconductor storage device
JPH0320838B2 (en) * 1982-05-20 1991-03-20 Tokyo Shibaura Electric Co
JPH0770626B2 (en) * 1984-10-29 1995-07-31 エイ・ティ・アンド・ティ グローバル インフォメーション ソルーションズ インターナショナル インコーポレイテッド Non-volatile memory cell
US5739568A (en) * 1994-11-28 1998-04-14 Motorola, Inc. Non-volatile memory having a cell applying to multi-bit data by double layered floating gate architecture and programming method for the same

Also Published As

Publication number Publication date
JPS5634106B2 (en) 1981-08-07

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