JPS5427778A - Non-volatile semiconductor memory device - Google Patents

Non-volatile semiconductor memory device

Info

Publication number
JPS5427778A
JPS5427778A JP9366777A JP9366777A JPS5427778A JP S5427778 A JPS5427778 A JP S5427778A JP 9366777 A JP9366777 A JP 9366777A JP 9366777 A JP9366777 A JP 9366777A JP S5427778 A JPS5427778 A JP S5427778A
Authority
JP
Japan
Prior art keywords
non
memory device
semiconductor memory
volatile semiconductor
erasing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9366777A
Inventor
Yoshio Hattori
Original Assignee
Seiko Instr & Electronics Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Instr & Electronics Ltd filed Critical Seiko Instr & Electronics Ltd
Priority to JP9366777A priority Critical patent/JPS5427778A/en
Publication of JPS5427778A publication Critical patent/JPS5427778A/en
Application status is Pending legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/10Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
    • H01L27/112Read-only memory structures [ROM] and multistep manufacturing processes therefor
    • H01L27/115Electrically programmable read-only memories; Multistep manufacturing processes therefor

Abstract

PURPOSE:To enable electrical writing and erasing to be performed by constituting p channel MOSFETs and n channel MOSFETs complementally and providing an insulated gate in each gate oxide film, in a non-volatile semiconductor memory device being able to perform writing and erasing.
JP9366777A 1977-08-04 1977-08-04 Non-volatile semiconductor memory device Pending JPS5427778A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9366777A JPS5427778A (en) 1977-08-04 1977-08-04 Non-volatile semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9366777A JPS5427778A (en) 1977-08-04 1977-08-04 Non-volatile semiconductor memory device

Publications (1)

Publication Number Publication Date
JPS5427778A true JPS5427778A (en) 1979-03-02

Family

ID=14088739

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9366777A Pending JPS5427778A (en) 1977-08-04 1977-08-04 Non-volatile semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS5427778A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5481038A (en) * 1977-11-21 1979-06-28 Hewlett Packard Yokogawa Semiconductor memory cell
JPS58100298A (en) * 1981-12-11 1983-06-14 Seiko Epson Corp Read-only memory circuit
JPS6329980A (en) * 1986-07-10 1988-02-08 Sgs Microelettronica Spa Non-volatile semiconductor memory device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5481038A (en) * 1977-11-21 1979-06-28 Hewlett Packard Yokogawa Semiconductor memory cell
JPS58100298A (en) * 1981-12-11 1983-06-14 Seiko Epson Corp Read-only memory circuit
JPH0531239B2 (en) * 1981-12-11 1993-05-12 Seiko Epson Corp
JPS6329980A (en) * 1986-07-10 1988-02-08 Sgs Microelettronica Spa Non-volatile semiconductor memory device

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