JPS5277681A - Nonvolatile memory device - Google Patents
Nonvolatile memory deviceInfo
- Publication number
- JPS5277681A JPS5277681A JP15425675A JP15425675A JPS5277681A JP S5277681 A JPS5277681 A JP S5277681A JP 15425675 A JP15425675 A JP 15425675A JP 15425675 A JP15425675 A JP 15425675A JP S5277681 A JPS5277681 A JP S5277681A
- Authority
- JP
- Japan
- Prior art keywords
- memory device
- nonvolatile memory
- erasing
- writing
- plane
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Non-Volatile Memory (AREA)
Abstract
PURPOSE: To simplify structure, to improve integration, to shorten access time and to increase bits by using semiconductor film where nonvolatile memory device is formed on insulative substrate and by locating electrode for writing and erasing on one plane.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15425675A JPS5939910B2 (en) | 1975-12-24 | 1975-12-24 | Fukihatsu Seiki Oxoshi |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15425675A JPS5939910B2 (en) | 1975-12-24 | 1975-12-24 | Fukihatsu Seiki Oxoshi |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5277681A true JPS5277681A (en) | 1977-06-30 |
JPS5939910B2 JPS5939910B2 (en) | 1984-09-27 |
Family
ID=15580221
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15425675A Expired JPS5939910B2 (en) | 1975-12-24 | 1975-12-24 | Fukihatsu Seiki Oxoshi |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5939910B2 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5759387A (en) * | 1980-09-26 | 1982-04-09 | Toshiba Corp | Semiconductor storage device |
JPS59117270A (en) * | 1982-12-24 | 1984-07-06 | Mitsubishi Electric Corp | Floating gate type nonvolatile mos semiconductor memory device |
JPH02114570A (en) * | 1988-10-25 | 1990-04-26 | Casio Comput Co Ltd | Thin-film e2 prom |
-
1975
- 1975-12-24 JP JP15425675A patent/JPS5939910B2/en not_active Expired
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5759387A (en) * | 1980-09-26 | 1982-04-09 | Toshiba Corp | Semiconductor storage device |
JPS6362113B2 (en) * | 1980-09-26 | 1988-12-01 | ||
JPS59117270A (en) * | 1982-12-24 | 1984-07-06 | Mitsubishi Electric Corp | Floating gate type nonvolatile mos semiconductor memory device |
JPH02114570A (en) * | 1988-10-25 | 1990-04-26 | Casio Comput Co Ltd | Thin-film e2 prom |
Also Published As
Publication number | Publication date |
---|---|
JPS5939910B2 (en) | 1984-09-27 |
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