JPS53132281A - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number
JPS53132281A
JPS53132281A JP4707377A JP4707377A JPS53132281A JP S53132281 A JPS53132281 A JP S53132281A JP 4707377 A JP4707377 A JP 4707377A JP 4707377 A JP4707377 A JP 4707377A JP S53132281 A JPS53132281 A JP S53132281A
Authority
JP
Japan
Prior art keywords
memory device
semiconductor memory
insulation film
semiconductor
breaking
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4707377A
Other languages
Japanese (ja)
Inventor
Kenji Okada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP4707377A priority Critical patent/JPS53132281A/en
Publication of JPS53132281A publication Critical patent/JPS53132281A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To enhance the integration of a writable read-only semiconductor memory device by constituting a memory cell of MIS structure with a thin insulation film provided between semiconductor an metal and writing by breaking the insulation film.
COPYRIGHT: (C)1978,JPO&Japio
JP4707377A 1977-04-22 1977-04-22 Semiconductor memory device Pending JPS53132281A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4707377A JPS53132281A (en) 1977-04-22 1977-04-22 Semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4707377A JPS53132281A (en) 1977-04-22 1977-04-22 Semiconductor memory device

Publications (1)

Publication Number Publication Date
JPS53132281A true JPS53132281A (en) 1978-11-17

Family

ID=12764982

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4707377A Pending JPS53132281A (en) 1977-04-22 1977-04-22 Semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS53132281A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57111885A (en) * 1980-12-27 1982-07-12 Seiko Instr & Electronics Ltd Insulated film destructive type read-only memory
JPS57148365A (en) * 1981-03-10 1982-09-13 Nec Corp Semiconductor device and manufacture thereof
US4922319A (en) * 1985-09-09 1990-05-01 Fujitsu Limited Semiconductor programmable memory device
US6992365B2 (en) * 2001-10-12 2006-01-31 Ovonyx, Inc. Reducing leakage currents in memories with phase-change material

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57111885A (en) * 1980-12-27 1982-07-12 Seiko Instr & Electronics Ltd Insulated film destructive type read-only memory
JPS57148365A (en) * 1981-03-10 1982-09-13 Nec Corp Semiconductor device and manufacture thereof
US4922319A (en) * 1985-09-09 1990-05-01 Fujitsu Limited Semiconductor programmable memory device
US6992365B2 (en) * 2001-10-12 2006-01-31 Ovonyx, Inc. Reducing leakage currents in memories with phase-change material

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