JPS57148365A - Semiconductor device and manufacture thereof - Google Patents

Semiconductor device and manufacture thereof

Info

Publication number
JPS57148365A
JPS57148365A JP3443481A JP3443481A JPS57148365A JP S57148365 A JPS57148365 A JP S57148365A JP 3443481 A JP3443481 A JP 3443481A JP 3443481 A JP3443481 A JP 3443481A JP S57148365 A JPS57148365 A JP S57148365A
Authority
JP
Japan
Prior art keywords
type
writing
base
layer
high density
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3443481A
Other languages
Japanese (ja)
Inventor
Masaaki Ohira
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP3443481A priority Critical patent/JPS57148365A/en
Publication of JPS57148365A publication Critical patent/JPS57148365A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/102—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including bipolar components
    • H01L27/1022—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including bipolar components including bipolar transistors
    • H01L27/1026—Bipolar electrically programmable memory structures

Abstract

PURPOSE:To enable to simplify the performance of writing-in work of ROM utilizing voltage breakdown by a method wherein a thin insulating film is formed on the base region of a transistor, and a base electrode connecting structure is formed through the intermediary of an insulating film. CONSTITUTION:An N type collector section 2 is formed on a P type Si substrate 1, and thick Si oxide films 3a and 3a', thin Si oxide films 3b and 3b', a P type base section 4, P type high density graft bases 5a and 5b, and N type high density emitter sections 6a and 6b are formed. Then, the ion of an inert element is implanted using a photoresist film 8 s a mask, and an insulating layer 9 is formed. Then, the resist 8 is removed, and an insulating layer 9 is formed in the base 5b by performing an annealing or a laser annealing. Accordingly, the layer 9 can be used as a capacitor, and also when it is used as an ROM, its writing-in is performed by voltage breakdown of the layer 9, thereby enabling to perform a stabilized writing-in work.
JP3443481A 1981-03-10 1981-03-10 Semiconductor device and manufacture thereof Pending JPS57148365A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3443481A JPS57148365A (en) 1981-03-10 1981-03-10 Semiconductor device and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3443481A JPS57148365A (en) 1981-03-10 1981-03-10 Semiconductor device and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS57148365A true JPS57148365A (en) 1982-09-13

Family

ID=12414109

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3443481A Pending JPS57148365A (en) 1981-03-10 1981-03-10 Semiconductor device and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS57148365A (en)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51121272A (en) * 1975-04-17 1976-10-23 Matsushita Electric Ind Co Ltd Manufacturing method for semiconductor devices
JPS53132281A (en) * 1977-04-22 1978-11-17 Nec Corp Semiconductor memory device
JPS5459090A (en) * 1977-10-19 1979-05-12 Nec Corp Semiconductor device and its manufacture
JPS54156490A (en) * 1978-05-31 1979-12-10 Toshiba Corp Forming method of current path in semiconductor
JPS5720466A (en) * 1980-07-14 1982-02-02 Toshiba Corp Semiconductor memory device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51121272A (en) * 1975-04-17 1976-10-23 Matsushita Electric Ind Co Ltd Manufacturing method for semiconductor devices
JPS53132281A (en) * 1977-04-22 1978-11-17 Nec Corp Semiconductor memory device
JPS5459090A (en) * 1977-10-19 1979-05-12 Nec Corp Semiconductor device and its manufacture
JPS54156490A (en) * 1978-05-31 1979-12-10 Toshiba Corp Forming method of current path in semiconductor
JPS5720466A (en) * 1980-07-14 1982-02-02 Toshiba Corp Semiconductor memory device

Similar Documents

Publication Publication Date Title
JPS60137070A (en) Manufacture of semiconductor device
JPH0372681A (en) Manufacture of semiconductor device
JPS5688354A (en) Semiconductor integrated circuit device
JPS5828873A (en) Semiconductor device and manufacture thereof
JPS58115859A (en) Manufacture of semiconductor device
JPS5758363A (en) Manufacture of mos type semiconductor device
JPS57148365A (en) Semiconductor device and manufacture thereof
JPS60144950A (en) Manufacture of semiconductor device
JPS5795658A (en) Manufacture of semiconductor device
JPS63136669A (en) Semiconductor device
JPH02208942A (en) Manufacture of thin film transistor
JPS5878464A (en) Manufacture of semiconductor device
JPS5828871A (en) Manufacture of silicon thin film semiconductor device
JPS5961966A (en) Formation of gate structure
JPS6148957A (en) Manufacture of mos capacitor
JPH0387058A (en) Manufacture of semiconductor integrated circuit
JPS5968961A (en) Semiconductor integrated circuit device and manufacture thereof
JPS54129983A (en) Manufacture of semiconductor device
JPS55140266A (en) Semiconductor device
KR890002990A (en) Manufacturing method of bipolar transistor
JPS6180861A (en) Manufacture of thin film transistor
JPS58127375A (en) Manufacture of semiconductor device
JPS57141954A (en) Manufacture of integrated circuit
JPS60106169A (en) Manufactuire of semiconductor device
JPS60163466A (en) Manufacture of semiconductor device