JPS57148365A - Semiconductor device and manufacture thereof - Google Patents

Semiconductor device and manufacture thereof

Info

Publication number
JPS57148365A
JPS57148365A JP3443481A JP3443481A JPS57148365A JP S57148365 A JPS57148365 A JP S57148365A JP 3443481 A JP3443481 A JP 3443481A JP 3443481 A JP3443481 A JP 3443481A JP S57148365 A JPS57148365 A JP S57148365A
Authority
JP
Japan
Prior art keywords
type
writing
base
layer
high density
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3443481A
Other languages
Japanese (ja)
Inventor
Masaaki Ohira
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP3443481A priority Critical patent/JPS57148365A/en
Publication of JPS57148365A publication Critical patent/JPS57148365A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/10Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/102Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including bipolar components
    • H01L27/1022Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including bipolar components including bipolar transistors
    • H01L27/1026Bipolar electrically programmable memory structures

Abstract

PURPOSE:To enable to simplify the performance of writing-in work of ROM utilizing voltage breakdown by a method wherein a thin insulating film is formed on the base region of a transistor, and a base electrode connecting structure is formed through the intermediary of an insulating film. CONSTITUTION:An N type collector section 2 is formed on a P type Si substrate 1, and thick Si oxide films 3a and 3a', thin Si oxide films 3b and 3b', a P type base section 4, P type high density graft bases 5a and 5b, and N type high density emitter sections 6a and 6b are formed. Then, the ion of an inert element is implanted using a photoresist film 8 s a mask, and an insulating layer 9 is formed. Then, the resist 8 is removed, and an insulating layer 9 is formed in the base 5b by performing an annealing or a laser annealing. Accordingly, the layer 9 can be used as a capacitor, and also when it is used as an ROM, its writing-in is performed by voltage breakdown of the layer 9, thereby enabling to perform a stabilized writing-in work.
JP3443481A 1981-03-10 1981-03-10 Semiconductor device and manufacture thereof Pending JPS57148365A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3443481A JPS57148365A (en) 1981-03-10 1981-03-10 Semiconductor device and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3443481A JPS57148365A (en) 1981-03-10 1981-03-10 Semiconductor device and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS57148365A true JPS57148365A (en) 1982-09-13

Family

ID=12414109

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3443481A Pending JPS57148365A (en) 1981-03-10 1981-03-10 Semiconductor device and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS57148365A (en)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51121272A (en) * 1975-04-17 1976-10-23 Matsushita Electric Ind Co Ltd Manufacturing method for semiconductor devices
JPS53132281A (en) * 1977-04-22 1978-11-17 Nec Corp Semiconductor memory device
JPS5459090A (en) * 1977-10-19 1979-05-12 Nec Corp Semiconductor device and its manufacture
JPS54156490A (en) * 1978-05-31 1979-12-10 Toshiba Corp Forming method of current path in semiconductor
JPS5720466A (en) * 1980-07-14 1982-02-02 Toshiba Corp Semiconductor memory device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51121272A (en) * 1975-04-17 1976-10-23 Matsushita Electric Ind Co Ltd Manufacturing method for semiconductor devices
JPS53132281A (en) * 1977-04-22 1978-11-17 Nec Corp Semiconductor memory device
JPS5459090A (en) * 1977-10-19 1979-05-12 Nec Corp Semiconductor device and its manufacture
JPS54156490A (en) * 1978-05-31 1979-12-10 Toshiba Corp Forming method of current path in semiconductor
JPS5720466A (en) * 1980-07-14 1982-02-02 Toshiba Corp Semiconductor memory device

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