JPS51147280A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS51147280A JPS51147280A JP50070826A JP7082675A JPS51147280A JP S51147280 A JPS51147280 A JP S51147280A JP 50070826 A JP50070826 A JP 50070826A JP 7082675 A JP7082675 A JP 7082675A JP S51147280 A JPS51147280 A JP S51147280A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- semiconductor
- implantation
- gate
- channel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To provide a memory system with larger output signals and high integration by implantation of signal charges from a semiconductor substrate of different type from a semiconductor to become a channel to the bottom of the gate, using a deep depression type MOST.
COPYRIGHT: (C)1976,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP50070826A JPS51147280A (en) | 1975-06-13 | 1975-06-13 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP50070826A JPS51147280A (en) | 1975-06-13 | 1975-06-13 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS51147280A true JPS51147280A (en) | 1976-12-17 |
Family
ID=13442764
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP50070826A Pending JPS51147280A (en) | 1975-06-13 | 1975-06-13 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS51147280A (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5384577A (en) * | 1976-12-30 | 1978-07-26 | Ibm | Nonndestructive reading dynamic semiconductor memory |
JPS54110742A (en) * | 1978-02-17 | 1979-08-30 | Sanyo Electric Co Ltd | Nonvolatile semiconductor memory device |
JPS55115355A (en) * | 1979-02-28 | 1980-09-05 | Nec Corp | Mos type memory |
JPS60182776A (en) * | 1984-02-29 | 1985-09-18 | Agency Of Ind Science & Technol | Nonvolatile semiconductor memory |
JP2009544166A (en) * | 2006-07-17 | 2009-12-10 | マイクロン テクノロジー, インク. | Capacitorless one-transistor DRAM cell, integrated circuit including an array of capacitorless one-transistor DRAM cells, and a method of forming a line of capacitorless one-transistor DRAM cells |
US10515801B2 (en) | 2007-06-04 | 2019-12-24 | Micron Technology, Inc. | Pitch multiplication using self-assembling materials |
-
1975
- 1975-06-13 JP JP50070826A patent/JPS51147280A/en active Pending
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5384577A (en) * | 1976-12-30 | 1978-07-26 | Ibm | Nonndestructive reading dynamic semiconductor memory |
JPS5635031B2 (en) * | 1976-12-30 | 1981-08-14 | ||
JPS54110742A (en) * | 1978-02-17 | 1979-08-30 | Sanyo Electric Co Ltd | Nonvolatile semiconductor memory device |
JPS582438B2 (en) * | 1978-02-17 | 1983-01-17 | 三洋電機株式会社 | Non-volatile semiconductor memory device |
JPS55115355A (en) * | 1979-02-28 | 1980-09-05 | Nec Corp | Mos type memory |
JPH0133946B2 (en) * | 1979-02-28 | 1989-07-17 | Nippon Electric Co | |
JPS60182776A (en) * | 1984-02-29 | 1985-09-18 | Agency Of Ind Science & Technol | Nonvolatile semiconductor memory |
JPH0462473B2 (en) * | 1984-02-29 | 1992-10-06 | Kogyo Gijutsu Incho | |
JP2009544166A (en) * | 2006-07-17 | 2009-12-10 | マイクロン テクノロジー, インク. | Capacitorless one-transistor DRAM cell, integrated circuit including an array of capacitorless one-transistor DRAM cells, and a method of forming a line of capacitorless one-transistor DRAM cells |
US9129847B2 (en) | 2006-07-17 | 2015-09-08 | Micron Technology, Inc. | Transistor structures and integrated circuitry comprising an array of transistor structures |
US10515801B2 (en) | 2007-06-04 | 2019-12-24 | Micron Technology, Inc. | Pitch multiplication using self-assembling materials |
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