JPS54110742A - Nonvolatile semiconductor memory device - Google Patents

Nonvolatile semiconductor memory device

Info

Publication number
JPS54110742A
JPS54110742A JP1777378A JP1777378A JPS54110742A JP S54110742 A JPS54110742 A JP S54110742A JP 1777378 A JP1777378 A JP 1777378A JP 1777378 A JP1777378 A JP 1777378A JP S54110742 A JPS54110742 A JP S54110742A
Authority
JP
Japan
Prior art keywords
line
erasion
level
memory
writing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1777378A
Other languages
Japanese (ja)
Other versions
JPS582438B2 (en
Inventor
Minoru Hamada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP53017773A priority Critical patent/JPS582438B2/en
Publication of JPS54110742A publication Critical patent/JPS54110742A/en
Publication of JPS582438B2 publication Critical patent/JPS582438B2/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0433—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and one or more separate select transistors

Abstract

PURPOSE:To increase the degree of integration by collecting the memory cells in the word-based system and then providing a switch transistor to each word. CONSTITUTION:The 1st and 2nd memory cells 11a and 11b are composed of memory transistors Q11 and Q11' plus switch transistors S11 and S11', and the memory unit 11 is composed with every 2 bits with the above two memory cells. And memory unit selecting switch transistor T11 is provided to each memory unit. Line selection line L11 is set to L level, and the writing pulse is applied to writing line W11 to carry out writing into Q11 and Q11'. After this, the erasion pulse is applied to erasion line E11 or E11' to perform the erasion of Q11 or Q11'. For the reading. L11 is set to H level and the reading voltage is applied to W11 to check the level for row selection line R11 and R11'.
JP53017773A 1978-02-17 1978-02-17 Non-volatile semiconductor memory device Expired JPS582438B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP53017773A JPS582438B2 (en) 1978-02-17 1978-02-17 Non-volatile semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP53017773A JPS582438B2 (en) 1978-02-17 1978-02-17 Non-volatile semiconductor memory device

Publications (2)

Publication Number Publication Date
JPS54110742A true JPS54110742A (en) 1979-08-30
JPS582438B2 JPS582438B2 (en) 1983-01-17

Family

ID=11953024

Family Applications (1)

Application Number Title Priority Date Filing Date
JP53017773A Expired JPS582438B2 (en) 1978-02-17 1978-02-17 Non-volatile semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS582438B2 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5769584A (en) * 1980-10-15 1982-04-28 Toshiba Corp Non-volatile semiconductor memory
JPS5769583A (en) * 1980-10-15 1982-04-28 Toshiba Corp Non_volatile semiconductor memory
JPS6052999A (en) * 1983-07-11 1985-03-26 エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン Memory device
JPS60229300A (en) * 1984-03-01 1985-11-14 エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン Eeprom type memory
US9030877B2 (en) 2007-08-30 2015-05-12 Infineon Technologies Ag Memory cell arrangement, method for controlling a memory cell, memory array and electronic device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105429094B (en) 2015-12-16 2018-02-16 南京南瑞继保电气有限公司 A kind of apparatus and method for ensureing intelligent substation trip protection reliability

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51147280A (en) * 1975-06-13 1976-12-17 Hitachi Ltd Semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51147280A (en) * 1975-06-13 1976-12-17 Hitachi Ltd Semiconductor device

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5769584A (en) * 1980-10-15 1982-04-28 Toshiba Corp Non-volatile semiconductor memory
JPS5769583A (en) * 1980-10-15 1982-04-28 Toshiba Corp Non_volatile semiconductor memory
JPS628877B2 (en) * 1980-10-15 1987-02-25 Tokyo Shibaura Electric Co
JPS628876B2 (en) * 1980-10-15 1987-02-25 Tokyo Shibaura Electric Co
JPS6052999A (en) * 1983-07-11 1985-03-26 エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン Memory device
JPS60229300A (en) * 1984-03-01 1985-11-14 エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン Eeprom type memory
US9030877B2 (en) 2007-08-30 2015-05-12 Infineon Technologies Ag Memory cell arrangement, method for controlling a memory cell, memory array and electronic device

Also Published As

Publication number Publication date
JPS582438B2 (en) 1983-01-17

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