JPS5782288A - Dynamic memory - Google Patents

Dynamic memory

Info

Publication number
JPS5782288A
JPS5782288A JP55159064A JP15906480A JPS5782288A JP S5782288 A JPS5782288 A JP S5782288A JP 55159064 A JP55159064 A JP 55159064A JP 15906480 A JP15906480 A JP 15906480A JP S5782288 A JPS5782288 A JP S5782288A
Authority
JP
Japan
Prior art keywords
dummy
word lines
memory
capacity
dynamic memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55159064A
Other languages
Japanese (ja)
Inventor
Kazuyasu Fujishima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP55159064A priority Critical patent/JPS5782288A/en
Publication of JPS5782288A publication Critical patent/JPS5782288A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4099—Dummy cell treatment; Reference voltage generators

Abstract

PURPOSE:To eliminate the restriction that they dummy cell capacity should be half a memory cell capacity, and to adhieve a memory with high circuit integration, through the selection of dummy word line at the same column side of selected word lines, in a dynamic memory. CONSTITUTION:A dynamic memory is constituted by connecting, e.g., 128 memory cells M0-M127, M128-M255 and two dummy cells DL1-DL2, DR1-DR2 to left and right bit lines LPL, RBL respectively. When left side word lines WL0- WL127 are selected to a sense circuit 5, dummy word lines RDW1 and LDW2 are selected, and when right side word lines WL128-WL255 are selected, dummy word lines LDW1 and RDW2 are selected. Since the dummy cell of the selected word line side is driven, the capacity 1.5 of opposite side is satisfactory to the added capacity 2.
JP55159064A 1980-11-10 1980-11-10 Dynamic memory Pending JPS5782288A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55159064A JPS5782288A (en) 1980-11-10 1980-11-10 Dynamic memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55159064A JPS5782288A (en) 1980-11-10 1980-11-10 Dynamic memory

Publications (1)

Publication Number Publication Date
JPS5782288A true JPS5782288A (en) 1982-05-22

Family

ID=15685421

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55159064A Pending JPS5782288A (en) 1980-11-10 1980-11-10 Dynamic memory

Country Status (1)

Country Link
JP (1) JPS5782288A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4800525A (en) * 1984-10-31 1989-01-24 Texas Instruments Incorporated Dual ended folded bit line arrangement and addressing scheme
US4839860A (en) * 1982-06-09 1989-06-13 Hitachi, Ltd. Semiconductor device having head only memory with differential amplifier
JP2004152394A (en) * 2002-10-30 2004-05-27 Renesas Technology Corp Semiconductor memory device
JP2008106879A (en) * 2006-10-26 2008-05-08 Uc Industrial Co Ltd Synthetic resin hose and manufacturing method thereof

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4839860A (en) * 1982-06-09 1989-06-13 Hitachi, Ltd. Semiconductor device having head only memory with differential amplifier
US4800525A (en) * 1984-10-31 1989-01-24 Texas Instruments Incorporated Dual ended folded bit line arrangement and addressing scheme
JP2004152394A (en) * 2002-10-30 2004-05-27 Renesas Technology Corp Semiconductor memory device
JP2008106879A (en) * 2006-10-26 2008-05-08 Uc Industrial Co Ltd Synthetic resin hose and manufacturing method thereof

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