JPS56130887A - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number
JPS56130887A
JPS56130887A JP3444280A JP3444280A JPS56130887A JP S56130887 A JPS56130887 A JP S56130887A JP 3444280 A JP3444280 A JP 3444280A JP 3444280 A JP3444280 A JP 3444280A JP S56130887 A JPS56130887 A JP S56130887A
Authority
JP
Japan
Prior art keywords
memory device
semiconductor memory
amplifiers
data lines
alternately
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3444280A
Other languages
Japanese (ja)
Inventor
Mineo Hayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP3444280A priority Critical patent/JPS56130887A/en
Publication of JPS56130887A publication Critical patent/JPS56130887A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
    • G11C5/025—Geometric lay-out considerations of storage- and peripheral-blocks in a semiconductor storage device

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To achieve high density, by alternately locating the sense amplifier to the end of direction with difference of parallel data lines. CONSTITUTION:The memory cell 11 is located at the cross point among the address lines W1-W6 and data lines D1,D1',-, D4, D4'. Further, input is fed from the line pairs D1D1',-D4D4' to the sense amplifiers SA1-SA4. In this case, the amplifiers SA1-SA4 are located to the end different for the cell matrix alternately. Thus, the number of the sense amplifiers at the same end can be halved.
JP3444280A 1980-03-18 1980-03-18 Semiconductor memory device Pending JPS56130887A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3444280A JPS56130887A (en) 1980-03-18 1980-03-18 Semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3444280A JPS56130887A (en) 1980-03-18 1980-03-18 Semiconductor memory device

Publications (1)

Publication Number Publication Date
JPS56130887A true JPS56130887A (en) 1981-10-14

Family

ID=12414346

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3444280A Pending JPS56130887A (en) 1980-03-18 1980-03-18 Semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS56130887A (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5873092A (en) * 1981-10-26 1983-05-02 Hitachi Ltd Semiconductor storage device
JPS60167193A (en) * 1984-02-09 1985-08-30 Fujitsu Ltd Semiconductor storage device
JPS60173793A (en) * 1984-02-17 1985-09-07 Fujitsu Ltd Semiconductor storage device
JPS60258796A (en) * 1984-06-04 1985-12-20 Sharp Corp Dynamic type semiconductor memory
JPS6134792A (en) * 1984-07-25 1986-02-19 Toshiba Corp Semiconductor memory device
JPS6346696A (en) * 1986-04-24 1988-02-27 Matsushita Electric Ind Co Ltd Semiconductor memory device
JPS63168698U (en) * 1987-04-23 1988-11-02
US4903344A (en) * 1987-07-07 1990-02-20 Oki Electric Industry Co., Ltd. Semiconductor memory device with staggered sense amplifiers
WO2004044918A1 (en) * 2002-11-12 2004-05-27 Renesas Technology Corp. Semiconductor storage device

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5873092A (en) * 1981-10-26 1983-05-02 Hitachi Ltd Semiconductor storage device
JPS60167193A (en) * 1984-02-09 1985-08-30 Fujitsu Ltd Semiconductor storage device
JPH0454316B2 (en) * 1984-02-09 1992-08-31 Fujitsu Ltd
JPS60173793A (en) * 1984-02-17 1985-09-07 Fujitsu Ltd Semiconductor storage device
JPH0514997B2 (en) * 1984-02-17 1993-02-26 Fujitsu Ltd
JPS60258796A (en) * 1984-06-04 1985-12-20 Sharp Corp Dynamic type semiconductor memory
JPS6134792A (en) * 1984-07-25 1986-02-19 Toshiba Corp Semiconductor memory device
JPS6346696A (en) * 1986-04-24 1988-02-27 Matsushita Electric Ind Co Ltd Semiconductor memory device
JPH0437514B2 (en) * 1986-04-24 1992-06-19 Matsushita Electric Ind Co Ltd
JPS63168698U (en) * 1987-04-23 1988-11-02
US4903344A (en) * 1987-07-07 1990-02-20 Oki Electric Industry Co., Ltd. Semiconductor memory device with staggered sense amplifiers
WO2004044918A1 (en) * 2002-11-12 2004-05-27 Renesas Technology Corp. Semiconductor storage device

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