JPS56148790A - Semiconductor memory - Google Patents

Semiconductor memory

Info

Publication number
JPS56148790A
JPS56148790A JP5334680A JP5334680A JPS56148790A JP S56148790 A JPS56148790 A JP S56148790A JP 5334680 A JP5334680 A JP 5334680A JP 5334680 A JP5334680 A JP 5334680A JP S56148790 A JPS56148790 A JP S56148790A
Authority
JP
Japan
Prior art keywords
semiconductor memory
cells
distances
varying
sizes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5334680A
Other languages
Japanese (ja)
Other versions
JPS6027119B2 (en
Inventor
Hiroshi Iwahashi
Masamichi Asano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP55053346A priority Critical patent/JPS6027119B2/en
Publication of JPS56148790A publication Critical patent/JPS56148790A/en
Publication of JPS6027119B2 publication Critical patent/JPS6027119B2/en
Expired legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/18Bit line organisation; Bit line lay-out

Landscapes

  • Read Only Memory (AREA)
  • Static Random-Access Memory (AREA)

Abstract

PURPOSE:To increase the readout speed of a semiconductor memory by varying the response speed of a memory cell output according to the distance of a row decoder. CONSTITUTION:The sizes of transistors constituting cells 15110... etc. are varied according to the distances from row decoder 12 to prevent the output response speeds of storage cells 15110... from decreasing according to the distances from decoder 12. As a result, the response speeds of respective memory cells 15110 are nearly equal and the readout speed of the semiconductor memory is substantially increased. Further, the same effect is obtained by varying the sizes of transistors of sense amplifiers or information output circuits.
JP55053346A 1980-04-22 1980-04-22 semiconductor memory Expired JPS6027119B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55053346A JPS6027119B2 (en) 1980-04-22 1980-04-22 semiconductor memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55053346A JPS6027119B2 (en) 1980-04-22 1980-04-22 semiconductor memory

Publications (2)

Publication Number Publication Date
JPS56148790A true JPS56148790A (en) 1981-11-18
JPS6027119B2 JPS6027119B2 (en) 1985-06-27

Family

ID=12940205

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55053346A Expired JPS6027119B2 (en) 1980-04-22 1980-04-22 semiconductor memory

Country Status (1)

Country Link
JP (1) JPS6027119B2 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5928295A (en) * 1982-08-06 1984-02-14 Nec Ic Microcomput Syst Ltd Integrated memory
FR2533061A1 (en) * 1982-09-10 1984-03-16 Hitachi Ltd SEMICONDUCTOR MEMORY
EP0119002A2 (en) * 1983-02-10 1984-09-19 Fujitsu Limited Semiconductor memory device
JPH07201183A (en) * 1993-12-28 1995-08-04 Nec Corp Semiconductor memory
JPH08273365A (en) * 1995-03-31 1996-10-18 Nec Corp Semiconductor memory

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5928295A (en) * 1982-08-06 1984-02-14 Nec Ic Microcomput Syst Ltd Integrated memory
FR2533061A1 (en) * 1982-09-10 1984-03-16 Hitachi Ltd SEMICONDUCTOR MEMORY
EP0119002A2 (en) * 1983-02-10 1984-09-19 Fujitsu Limited Semiconductor memory device
JPH07201183A (en) * 1993-12-28 1995-08-04 Nec Corp Semiconductor memory
JPH08273365A (en) * 1995-03-31 1996-10-18 Nec Corp Semiconductor memory

Also Published As

Publication number Publication date
JPS6027119B2 (en) 1985-06-27

Similar Documents

Publication Publication Date Title
JPS5333076A (en) Production of mos type integrated circuit
JPS5362989A (en) Semiconductor memory device
JPS5771574A (en) Siemconductor memory circuit
JPS56137589A (en) Semiconductor storage device
EP0107387A3 (en) Semiconductor memory device
JPS5525858A (en) Memory unit
JPS56148790A (en) Semiconductor memory
JPS5769586A (en) Semiconductor memory device
EP0050772A3 (en) Jfet dynamic memory
EP0187246A3 (en) Precharge circuit for bit lines of semiconductor memory
JPS5733493A (en) Semiconductor storage device
JPS56130887A (en) Semiconductor memory device
JPS51139220A (en) Sense amplifier
JPS51122383A (en) Semiconductor memory
JPS51147280A (en) Semiconductor device
JPS5427734A (en) Dynamic semiconductor memory
JPS5325323A (en) Pre-sense amplifier
JPS573290A (en) Semiconductor storing circuit
JPS57105890A (en) Semiconductor storage device
JPS5558891A (en) Semiconductor memory unit
JPS5782288A (en) Dynamic memory
JPS53132281A (en) Semiconductor memory device
JPS5280788A (en) Semiconductor memory cell
JPS5363824A (en) Semiconductor random access memory
JPS5771589A (en) Memory exclusively used for read-out of semiconductor