JPS5771589A - Memory exclusively used for read-out of semiconductor - Google Patents

Memory exclusively used for read-out of semiconductor

Info

Publication number
JPS5771589A
JPS5771589A JP14703280A JP14703280A JPS5771589A JP S5771589 A JPS5771589 A JP S5771589A JP 14703280 A JP14703280 A JP 14703280A JP 14703280 A JP14703280 A JP 14703280A JP S5771589 A JPS5771589 A JP S5771589A
Authority
JP
Japan
Prior art keywords
reduced
trains
read
decoder
integration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14703280A
Other languages
Japanese (ja)
Other versions
JPH0127518B2 (en
Inventor
Tsutomu Ogishi
Tamotsu Maeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Sanyo Denki Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Sanyo Denki Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd, Sanyo Denki Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP14703280A priority Critical patent/JPS5771589A/en
Publication of JPS5771589A publication Critical patent/JPS5771589A/en
Publication of JPH0127518B2 publication Critical patent/JPH0127518B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices

Landscapes

  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)

Abstract

PURPOSE:To elevate the degree of integration and to increase a read-out speed, by constituting so as to use a contact hole in common by (k) number of memory trains. CONSTITUTION:An ROM is constituted of M number of blocks 9 provided in parallel in the lateral direction with plural memory cell trains to which M number of X-decoders 21, each 1 piece of Y-decoder 22 and Z-decoder 23, and a transistor (TR) 10 are connected in series. Also, (k) number (k=2 in the figure) of trains 8 being adjacent to each other in the same block are made 1 group, and as for the memory cell trains of the same group, the drains of each TR14 are connected in the lump by a contact hole 1. As a result, the number of contact holes is reduced to 1/k. Also, the number of gate lines 13' of a switch TR13 is also reduced to 1/k, and all of them are capable of contributing to elevation of the degree of integration. On the other hand, size of the hole 1 becomes large, but therefore, contact resistance is reduced. Also, since an area of a TR15 is widened and its conducting resistance is reduced to 1/k or less, access is executed at a high speed.
JP14703280A 1980-10-20 1980-10-20 Memory exclusively used for read-out of semiconductor Granted JPS5771589A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14703280A JPS5771589A (en) 1980-10-20 1980-10-20 Memory exclusively used for read-out of semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14703280A JPS5771589A (en) 1980-10-20 1980-10-20 Memory exclusively used for read-out of semiconductor

Publications (2)

Publication Number Publication Date
JPS5771589A true JPS5771589A (en) 1982-05-04
JPH0127518B2 JPH0127518B2 (en) 1989-05-29

Family

ID=15420985

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14703280A Granted JPS5771589A (en) 1980-10-20 1980-10-20 Memory exclusively used for read-out of semiconductor

Country Status (1)

Country Link
JP (1) JPS5771589A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5998387A (en) * 1982-11-26 1984-06-06 Nec Corp Memory circuit
JPS63153796A (en) * 1986-12-18 1988-06-27 Matsushita Electronics Corp Read only storage device
JPS63226060A (en) * 1986-10-27 1988-09-20 Seiko Epson Corp Semiconductor storage device

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5034435A (en) * 1973-07-31 1975-04-02
JPS5380931A (en) * 1976-12-27 1978-07-17 Hitachi Ltd Semiconductor lead-only memory
JPS5523604A (en) * 1978-06-23 1980-02-20 Toshiba Corp Logic circuit
JPS5552593A (en) * 1978-10-11 1980-04-17 Nec Corp Memory unit
JPS5577091A (en) * 1978-12-01 1980-06-10 Nec Corp Read-only memory circuit
JPS5633873A (en) * 1979-08-29 1981-04-04 Hitachi Ltd Read only memory device

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5034435A (en) * 1973-07-31 1975-04-02
JPS5380931A (en) * 1976-12-27 1978-07-17 Hitachi Ltd Semiconductor lead-only memory
JPS5523604A (en) * 1978-06-23 1980-02-20 Toshiba Corp Logic circuit
JPS5552593A (en) * 1978-10-11 1980-04-17 Nec Corp Memory unit
JPS5577091A (en) * 1978-12-01 1980-06-10 Nec Corp Read-only memory circuit
JPS5633873A (en) * 1979-08-29 1981-04-04 Hitachi Ltd Read only memory device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5998387A (en) * 1982-11-26 1984-06-06 Nec Corp Memory circuit
JPS6252392B2 (en) * 1982-11-26 1987-11-05 Nippon Electric Co
JPS63226060A (en) * 1986-10-27 1988-09-20 Seiko Epson Corp Semiconductor storage device
JP2563803B2 (en) * 1986-10-27 1996-12-18 セイコーエプソン株式会社 Semiconductor memory device
JPS63153796A (en) * 1986-12-18 1988-06-27 Matsushita Electronics Corp Read only storage device

Also Published As

Publication number Publication date
JPH0127518B2 (en) 1989-05-29

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