JPS5294784A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5294784A
JPS5294784A JP1199876A JP1199876A JPS5294784A JP S5294784 A JPS5294784 A JP S5294784A JP 1199876 A JP1199876 A JP 1199876A JP 1199876 A JP1199876 A JP 1199876A JP S5294784 A JPS5294784 A JP S5294784A
Authority
JP
Japan
Prior art keywords
semiconductor device
information
redoubled
detects
memory cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1199876A
Other languages
Japanese (ja)
Inventor
Toshio Wada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP1199876A priority Critical patent/JPS5294784A/en
Publication of JPS5294784A publication Critical patent/JPS5294784A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices

Landscapes

  • Semiconductor Memories (AREA)

Abstract

PURPOSE:Two units of memory cell are provided at the cross point between paired line and row lines, and the information complementary to each other is stored. As a result, the gain product of the detection circuit which detects the above mentioned information is redoubled in order to increase the detection sensitivity as well as to facilitate large capacity.
JP1199876A 1976-02-05 1976-02-05 Semiconductor device Pending JPS5294784A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1199876A JPS5294784A (en) 1976-02-05 1976-02-05 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1199876A JPS5294784A (en) 1976-02-05 1976-02-05 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5294784A true JPS5294784A (en) 1977-08-09

Family

ID=11793244

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1199876A Pending JPS5294784A (en) 1976-02-05 1976-02-05 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5294784A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55157194A (en) * 1979-05-23 1980-12-06 Fujitsu Ltd Semiconductor memory device
JPH0575057A (en) * 1991-07-17 1993-03-26 Sharp Corp Semiconductor storage device
WO2003052829A1 (en) * 2001-12-14 2003-06-26 Hitachi, Ltd. Semiconductor device and method for manufacturing the same

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55157194A (en) * 1979-05-23 1980-12-06 Fujitsu Ltd Semiconductor memory device
JPH0575057A (en) * 1991-07-17 1993-03-26 Sharp Corp Semiconductor storage device
WO2003052829A1 (en) * 2001-12-14 2003-06-26 Hitachi, Ltd. Semiconductor device and method for manufacturing the same
CN100336226C (en) * 2001-12-14 2007-09-05 株式会社日立制作所 Semiconductor device and manufacturing method thereof
US7408218B2 (en) 2001-12-14 2008-08-05 Renesas Technology Corporation Semiconductor device having plural dram memory cells and a logic circuit
US7683419B2 (en) 2001-12-14 2010-03-23 Renesas Technology Corp. Semiconductor device having plural DRAM memory cells and a logic circuit and method for manufacturing the same
US7804118B2 (en) 2001-12-14 2010-09-28 Renesas Technology Corp. Semiconductor device having plural DRAM memory cells and a logic circuit and method for manufacturing the same
US8106441B2 (en) 2001-12-14 2012-01-31 Renesas Electronics Corporation Semiconductor device having plural DRAM memory cells and a logic circuit and method for manufacturing the same

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