JPS5429935A - Bi-polar semiconductor memory - Google Patents

Bi-polar semiconductor memory

Info

Publication number
JPS5429935A
JPS5429935A JP9508177A JP9508177A JPS5429935A JP S5429935 A JPS5429935 A JP S5429935A JP 9508177 A JP9508177 A JP 9508177A JP 9508177 A JP9508177 A JP 9508177A JP S5429935 A JPS5429935 A JP S5429935A
Authority
JP
Japan
Prior art keywords
semiconductor memory
polar semiconductor
memory cell
polar
inverters
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9508177A
Other languages
Japanese (ja)
Other versions
JPS5951149B2 (en
Inventor
Masato Iwabuchi
Katsumi Ogiue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP52095081A priority Critical patent/JPS5951149B2/en
Publication of JPS5429935A publication Critical patent/JPS5429935A/en
Publication of JPS5951149B2 publication Critical patent/JPS5951149B2/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/411—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only
    • G11C11/4116—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only with at least one cell access via separately connected emittors of said transistors or via multiple emittors, e.g. T2L, ECL

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE:To increase the capacity of a memory cell without increasing the area of the memory cell by cross-connecting two inverters, which parallel circuits of a load resistance and a capacitor are connected in series to respectively, to bi-polar transistor elements.
JP52095081A 1977-08-10 1977-08-10 Bipolar semiconductor memory device Expired JPS5951149B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP52095081A JPS5951149B2 (en) 1977-08-10 1977-08-10 Bipolar semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP52095081A JPS5951149B2 (en) 1977-08-10 1977-08-10 Bipolar semiconductor memory device

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP60220003A Division JPS61111577A (en) 1985-10-04 1985-10-04 Bi-polar semiconductor memory device

Publications (2)

Publication Number Publication Date
JPS5429935A true JPS5429935A (en) 1979-03-06
JPS5951149B2 JPS5951149B2 (en) 1984-12-12

Family

ID=14127989

Family Applications (1)

Application Number Title Priority Date Filing Date
JP52095081A Expired JPS5951149B2 (en) 1977-08-10 1977-08-10 Bipolar semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS5951149B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59148767U (en) * 1983-03-28 1984-10-04 プリンス開発興業株式会社 safety razor
JPS59165169U (en) * 1983-04-20 1984-11-06 プリンス開発興業株式会社 safety razor
JPS61282690A (en) * 1985-03-01 1986-12-12 ジエ−ムス・シ−・ロバ−ツ Tube for irrigation and method of assembling tube
US10875199B2 (en) 2016-06-24 2020-12-29 Dorco Co., Ltd. Razor comprising handle with through-hole

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59148767U (en) * 1983-03-28 1984-10-04 プリンス開発興業株式会社 safety razor
JPS59165169U (en) * 1983-04-20 1984-11-06 プリンス開発興業株式会社 safety razor
JPS61282690A (en) * 1985-03-01 1986-12-12 ジエ−ムス・シ−・ロバ−ツ Tube for irrigation and method of assembling tube
JPH0413593B2 (en) * 1985-03-01 1992-03-10 Shii Robaatsu Jeemusu
US10875199B2 (en) 2016-06-24 2020-12-29 Dorco Co., Ltd. Razor comprising handle with through-hole

Also Published As

Publication number Publication date
JPS5951149B2 (en) 1984-12-12

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