JPS53148989A - Mis-type semiconductor memory device - Google Patents

Mis-type semiconductor memory device

Info

Publication number
JPS53148989A
JPS53148989A JP6333077A JP6333077A JPS53148989A JP S53148989 A JPS53148989 A JP S53148989A JP 6333077 A JP6333077 A JP 6333077A JP 6333077 A JP6333077 A JP 6333077A JP S53148989 A JPS53148989 A JP S53148989A
Authority
JP
Japan
Prior art keywords
mis
memory device
type semiconductor
semiconductor memory
applying
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6333077A
Other languages
Japanese (ja)
Other versions
JPS6120149B2 (en
Inventor
Kotaro Nishimura
Norimasa Yasui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP6333077A priority Critical patent/JPS53148989A/en
Priority to DE19772733514 priority patent/DE2733514A1/en
Priority to DE2760086A priority patent/DE2760086C2/de
Publication of JPS53148989A publication Critical patent/JPS53148989A/en
Publication of JPS6120149B2 publication Critical patent/JPS6120149B2/ja
Priority to US07/684,867 priority patent/US5359562A/en
Priority to US08/230,814 priority patent/US5446689A/en
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0927—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors comprising a P-well only in the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Static Random-Access Memory (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To increase the integrated degree as well as to decrease the power consumption while the memory capacity is increased, by using the high-resistance poly-crystal Si layer as the load means of the FF which is formed to a memory cell by applying the output of a pair of inverters to the other input and applying the output of the other side to the input of one side respectively.
JP6333077A 1976-07-26 1977-06-01 Mis-type semiconductor memory device Granted JPS53148989A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP6333077A JPS53148989A (en) 1977-06-01 1977-06-01 Mis-type semiconductor memory device
DE19772733514 DE2733514A1 (en) 1976-07-26 1977-07-25 MISFET control electrode produced on semiconductor substrate - is formed on top of insulator layer overlapping source and drain areas
DE2760086A DE2760086C2 (en) 1976-07-26 1977-07-25
US07/684,867 US5359562A (en) 1976-07-26 1991-04-15 Semiconductor memory having polycrystalline silicon load resistors and CMOS peripheral circuitry
US08/230,814 US5446689A (en) 1976-07-26 1994-04-21 Semiconductor memory having a polycrystalline silicon load resistor and CMOS peripheral circuitry

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6333077A JPS53148989A (en) 1977-06-01 1977-06-01 Mis-type semiconductor memory device

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP59028514A Division JPS59229788A (en) 1984-02-20 1984-02-20 Mis semiconductor memory

Publications (2)

Publication Number Publication Date
JPS53148989A true JPS53148989A (en) 1978-12-26
JPS6120149B2 JPS6120149B2 (en) 1986-05-21

Family

ID=13226121

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6333077A Granted JPS53148989A (en) 1976-07-26 1977-06-01 Mis-type semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS53148989A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4747082A (en) * 1984-11-28 1988-05-24 Hitachi Ltd. Semiconductor memory with automatic refresh means
US4849801A (en) * 1984-11-28 1989-07-18 Hitachi, Ltd. Semiconductor memory device having increased capacitance for the storing nodes of the memory cells

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0365455U (en) * 1989-10-25 1991-06-26

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49131744A (en) * 1973-04-18 1974-12-17
JPS5011644A (en) * 1973-06-01 1975-02-06

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49131744A (en) * 1973-04-18 1974-12-17
JPS5011644A (en) * 1973-06-01 1975-02-06

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4747082A (en) * 1984-11-28 1988-05-24 Hitachi Ltd. Semiconductor memory with automatic refresh means
US4849801A (en) * 1984-11-28 1989-07-18 Hitachi, Ltd. Semiconductor memory device having increased capacitance for the storing nodes of the memory cells

Also Published As

Publication number Publication date
JPS6120149B2 (en) 1986-05-21

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