JPS5361981A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5361981A
JPS5361981A JP13691076A JP13691076A JPS5361981A JP S5361981 A JPS5361981 A JP S5361981A JP 13691076 A JP13691076 A JP 13691076A JP 13691076 A JP13691076 A JP 13691076A JP S5361981 A JPS5361981 A JP S5361981A
Authority
JP
Japan
Prior art keywords
semiconductor device
pair
power consumption
making
high speed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13691076A
Other languages
Japanese (ja)
Other versions
JPS6025905B2 (en
Inventor
Seiya Tokumaru
Masanori Nakai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP51136910A priority Critical patent/JPS6025905B2/en
Publication of JPS5361981A publication Critical patent/JPS5361981A/en
Publication of JPS6025905B2 publication Critical patent/JPS6025905B2/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203Particular design considerations for integrated circuits
    • H01L27/0214Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0229Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
    • H01L27/0233Integrated injection logic structures [I2L]

Abstract

PURPOSE:To obtain a logic element of low power consumption and superior high speed characteristics by making a pair of lateral transistors of varying polarities as a basic constitution by mutually integrating partial regions.
JP51136910A 1976-11-16 1976-11-16 semiconductor equipment Expired JPS6025905B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP51136910A JPS6025905B2 (en) 1976-11-16 1976-11-16 semiconductor equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP51136910A JPS6025905B2 (en) 1976-11-16 1976-11-16 semiconductor equipment

Publications (2)

Publication Number Publication Date
JPS5361981A true JPS5361981A (en) 1978-06-02
JPS6025905B2 JPS6025905B2 (en) 1985-06-20

Family

ID=15186423

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51136910A Expired JPS6025905B2 (en) 1976-11-16 1976-11-16 semiconductor equipment

Country Status (1)

Country Link
JP (1) JPS6025905B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0052465A2 (en) * 1980-11-13 1982-05-26 Kabushiki Kaisha Toshiba I2L semiconductor device
JPS59229858A (en) * 1983-06-13 1984-12-24 Oki Electric Ind Co Ltd Bi-polar type semiconductor device

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0450484Y2 (en) * 1985-11-13 1992-11-27
JPS6468601A (en) * 1987-09-09 1989-03-14 Toyota Motor Corp Internal diameter measuring instrument

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0052465A2 (en) * 1980-11-13 1982-05-26 Kabushiki Kaisha Toshiba I2L semiconductor device
JPS59229858A (en) * 1983-06-13 1984-12-24 Oki Electric Ind Co Ltd Bi-polar type semiconductor device
JPH0426223B2 (en) * 1983-06-13 1992-05-06 Oki Electric Ind Co Ltd

Also Published As

Publication number Publication date
JPS6025905B2 (en) 1985-06-20

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