JPS5361981A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5361981A JPS5361981A JP13691076A JP13691076A JPS5361981A JP S5361981 A JPS5361981 A JP S5361981A JP 13691076 A JP13691076 A JP 13691076A JP 13691076 A JP13691076 A JP 13691076A JP S5361981 A JPS5361981 A JP S5361981A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- pair
- power consumption
- making
- high speed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
- H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
- H01L27/0233—Integrated injection logic structures [I2L]
Abstract
PURPOSE:To obtain a logic element of low power consumption and superior high speed characteristics by making a pair of lateral transistors of varying polarities as a basic constitution by mutually integrating partial regions.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP51136910A JPS6025905B2 (en) | 1976-11-16 | 1976-11-16 | semiconductor equipment |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP51136910A JPS6025905B2 (en) | 1976-11-16 | 1976-11-16 | semiconductor equipment |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5361981A true JPS5361981A (en) | 1978-06-02 |
JPS6025905B2 JPS6025905B2 (en) | 1985-06-20 |
Family
ID=15186423
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP51136910A Expired JPS6025905B2 (en) | 1976-11-16 | 1976-11-16 | semiconductor equipment |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6025905B2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0052465A2 (en) * | 1980-11-13 | 1982-05-26 | Kabushiki Kaisha Toshiba | I2L semiconductor device |
JPS59229858A (en) * | 1983-06-13 | 1984-12-24 | Oki Electric Ind Co Ltd | Bi-polar type semiconductor device |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0450484Y2 (en) * | 1985-11-13 | 1992-11-27 | ||
JPS6468601A (en) * | 1987-09-09 | 1989-03-14 | Toyota Motor Corp | Internal diameter measuring instrument |
-
1976
- 1976-11-16 JP JP51136910A patent/JPS6025905B2/en not_active Expired
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0052465A2 (en) * | 1980-11-13 | 1982-05-26 | Kabushiki Kaisha Toshiba | I2L semiconductor device |
JPS59229858A (en) * | 1983-06-13 | 1984-12-24 | Oki Electric Ind Co Ltd | Bi-polar type semiconductor device |
JPH0426223B2 (en) * | 1983-06-13 | 1992-05-06 | Oki Electric Ind Co Ltd |
Also Published As
Publication number | Publication date |
---|---|
JPS6025905B2 (en) | 1985-06-20 |
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