JPS52119133A - Mos dynamic memory - Google Patents

Mos dynamic memory

Info

Publication number
JPS52119133A
JPS52119133A JP3577476A JP3577476A JPS52119133A JP S52119133 A JPS52119133 A JP S52119133A JP 3577476 A JP3577476 A JP 3577476A JP 3577476 A JP3577476 A JP 3577476A JP S52119133 A JPS52119133 A JP S52119133A
Authority
JP
Japan
Prior art keywords
dynamic memory
mos dynamic
mos
ratioless
actuate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3577476A
Other languages
Japanese (ja)
Inventor
Isao Ogura
Kazunori Ouchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP3577476A priority Critical patent/JPS52119133A/en
Publication of JPS52119133A publication Critical patent/JPS52119133A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4076—Timing circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)

Abstract

PURPOSE:To obtain the dynamic sense circuit with high sensitivity and the low power consumption by the use of the balance-type FF to actuate in the ratioless state.
JP3577476A 1976-03-31 1976-03-31 Mos dynamic memory Pending JPS52119133A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3577476A JPS52119133A (en) 1976-03-31 1976-03-31 Mos dynamic memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3577476A JPS52119133A (en) 1976-03-31 1976-03-31 Mos dynamic memory

Publications (1)

Publication Number Publication Date
JPS52119133A true JPS52119133A (en) 1977-10-06

Family

ID=12451220

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3577476A Pending JPS52119133A (en) 1976-03-31 1976-03-31 Mos dynamic memory

Country Status (1)

Country Link
JP (1) JPS52119133A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61113183A (en) * 1985-11-16 1986-05-31 Fujitsu Ltd Semiconductor memory circuit
JPS6346695A (en) * 1987-06-08 1988-02-27 Hitachi Ltd Semiconductor memory

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3838295A (en) * 1973-02-05 1974-09-24 Lockheed Electronics Co Ratioless mos sense amplifier
JPS5135775A (en) * 1974-09-19 1976-03-26 Heiwa Takaron Kk Konansofukugo no rejinfuerutoto sonoseizohoho

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3838295A (en) * 1973-02-05 1974-09-24 Lockheed Electronics Co Ratioless mos sense amplifier
JPS5135775A (en) * 1974-09-19 1976-03-26 Heiwa Takaron Kk Konansofukugo no rejinfuerutoto sonoseizohoho

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61113183A (en) * 1985-11-16 1986-05-31 Fujitsu Ltd Semiconductor memory circuit
JPH0226318B2 (en) * 1985-11-16 1990-06-08 Fujitsu Ltd
JPS6346695A (en) * 1987-06-08 1988-02-27 Hitachi Ltd Semiconductor memory

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