JPS52119132A - Mos dynamic memory - Google Patents

Mos dynamic memory

Info

Publication number
JPS52119132A
JPS52119132A JP3576976A JP3576976A JPS52119132A JP S52119132 A JPS52119132 A JP S52119132A JP 3576976 A JP3576976 A JP 3576976A JP 3576976 A JP3576976 A JP 3576976A JP S52119132 A JPS52119132 A JP S52119132A
Authority
JP
Japan
Prior art keywords
dynamic memory
mos dynamic
mos
ratioless
suing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3576976A
Other languages
Japanese (ja)
Other versions
JPS5518993B2 (en
Inventor
Kazunori Ouchi
Isao Ogura
Toru Furuyama
Fujio Masuoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP3576976A priority Critical patent/JPS52119132A/en
Publication of JPS52119132A publication Critical patent/JPS52119132A/en
Publication of JPS5518993B2 publication Critical patent/JPS5518993B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4076—Timing circuits

Abstract

PURPOSE:To compact the constitution by suing the MOS transistor in the ratioless state to reduce the power consumption and to provide the sense circuit that enables the high sensitivity reading.
JP3576976A 1976-03-31 1976-03-31 Mos dynamic memory Granted JPS52119132A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3576976A JPS52119132A (en) 1976-03-31 1976-03-31 Mos dynamic memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3576976A JPS52119132A (en) 1976-03-31 1976-03-31 Mos dynamic memory

Publications (2)

Publication Number Publication Date
JPS52119132A true JPS52119132A (en) 1977-10-06
JPS5518993B2 JPS5518993B2 (en) 1980-05-22

Family

ID=12451062

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3576976A Granted JPS52119132A (en) 1976-03-31 1976-03-31 Mos dynamic memory

Country Status (1)

Country Link
JP (1) JPS52119132A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54162425A (en) * 1978-06-13 1979-12-24 Nec Corp Transistor circuit for semiconductor memory device

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
IBM TECHNICAL DISCLOSURE BULLETIN#V16#N9=1974 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54162425A (en) * 1978-06-13 1979-12-24 Nec Corp Transistor circuit for semiconductor memory device
JPS6156595B2 (en) * 1978-06-13 1986-12-03 Nippon Electric Co

Also Published As

Publication number Publication date
JPS5518993B2 (en) 1980-05-22

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