JPS5354987A - Complementary type mos semiconductor memory - Google Patents

Complementary type mos semiconductor memory

Info

Publication number
JPS5354987A
JPS5354987A JP12953876A JP12953876A JPS5354987A JP S5354987 A JPS5354987 A JP S5354987A JP 12953876 A JP12953876 A JP 12953876A JP 12953876 A JP12953876 A JP 12953876A JP S5354987 A JPS5354987 A JP S5354987A
Authority
JP
Japan
Prior art keywords
semiconductor memory
type mos
type
mos semiconductor
complementary type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12953876A
Other languages
Japanese (ja)
Other versions
JPS617749B2 (en
Inventor
Toshiaki Masuhara
Yoshio Sakai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP12953876A priority Critical patent/JPS5354987A/en
Publication of JPS5354987A publication Critical patent/JPS5354987A/en
Publication of JPS617749B2 publication Critical patent/JPS617749B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0927—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors comprising a P-well only in the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Dram (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To obtain a memory of a high speed and low power consumption by providing a diffused layer which becomes a data line and a memory cell formed by storage capacity within an N type semiconductor substrate, and using C-MOS transistors constituted by the N type source, drain diffused layers within the P type region formed in the N type substrate at its peripheral circuit.
JP12953876A 1976-10-29 1976-10-29 Complementary type mos semiconductor memory Granted JPS5354987A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12953876A JPS5354987A (en) 1976-10-29 1976-10-29 Complementary type mos semiconductor memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12953876A JPS5354987A (en) 1976-10-29 1976-10-29 Complementary type mos semiconductor memory

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP58200970A Division JPS59130462A (en) 1983-10-28 1983-10-28 Complementary type metal oxide semiconductor memory

Publications (2)

Publication Number Publication Date
JPS5354987A true JPS5354987A (en) 1978-05-18
JPS617749B2 JPS617749B2 (en) 1986-03-08

Family

ID=15011989

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12953876A Granted JPS5354987A (en) 1976-10-29 1976-10-29 Complementary type mos semiconductor memory

Country Status (1)

Country Link
JP (1) JPS5354987A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57133668A (en) * 1981-02-12 1982-08-18 Nec Corp Semiconductor memory storage
EP0109854A2 (en) * 1982-11-23 1984-05-30 American Microsystems, Incorporated Semiconductor memory devices and methods for making the same

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57133668A (en) * 1981-02-12 1982-08-18 Nec Corp Semiconductor memory storage
JPH0150114B2 (en) * 1981-02-12 1989-10-27 Nippon Electric Co
EP0109854A2 (en) * 1982-11-23 1984-05-30 American Microsystems, Incorporated Semiconductor memory devices and methods for making the same
EP0109854A3 (en) * 1982-11-23 1985-08-07 American Microsystems, Incorporated Semiconductor memory devices and methods for making the same

Also Published As

Publication number Publication date
JPS617749B2 (en) 1986-03-08

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