JPS5231627A - Semiconductor memory unit - Google Patents

Semiconductor memory unit

Info

Publication number
JPS5231627A
JPS5231627A JP50066554A JP6655475A JPS5231627A JP S5231627 A JPS5231627 A JP S5231627A JP 50066554 A JP50066554 A JP 50066554A JP 6655475 A JP6655475 A JP 6655475A JP S5231627 A JPS5231627 A JP S5231627A
Authority
JP
Japan
Prior art keywords
semiconductor memory
memory unit
conductive layer
insulation layer
laminated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP50066554A
Other languages
Japanese (ja)
Other versions
JPS596068B2 (en
Inventor
Shinji Shimizu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP50066554A priority Critical patent/JPS596068B2/en
Publication of JPS5231627A publication Critical patent/JPS5231627A/en
Publication of JPS596068B2 publication Critical patent/JPS596068B2/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)

Abstract

PURPOSE:Development of a memory cell large in memory capacity and small in occupation area by forming the first conductive layer on the first insulation layer laminated on the substrate and the second conductive layer on the second insulation layer laminated on the first conductive layer.
JP50066554A 1975-06-04 1975-06-04 semiconductor memory device Expired JPS596068B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50066554A JPS596068B2 (en) 1975-06-04 1975-06-04 semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50066554A JPS596068B2 (en) 1975-06-04 1975-06-04 semiconductor memory device

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP59236604A Division JPS60121763A (en) 1984-11-12 1984-11-12 Semiconductor memory storage

Publications (2)

Publication Number Publication Date
JPS5231627A true JPS5231627A (en) 1977-03-10
JPS596068B2 JPS596068B2 (en) 1984-02-08

Family

ID=13319239

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50066554A Expired JPS596068B2 (en) 1975-06-04 1975-06-04 semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS596068B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58137242A (en) * 1982-02-09 1983-08-15 Seiko Epson Corp Integrated circuit device
US4475118A (en) * 1978-12-21 1984-10-02 National Semiconductor Corporation Dynamic MOS RAM with storage cells having a mainly insulated first plate
JPH02191370A (en) * 1989-12-15 1990-07-27 Seiko Epson Corp Semiconductor device
US5049958A (en) * 1989-01-27 1991-09-17 Texas Instruments Incorporated Stacked capacitors for VLSI semiconductor devices

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60103576U (en) * 1983-12-22 1985-07-15 日産ディーゼル工業株式会社 Welded structure of damping steel plate

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4475118A (en) * 1978-12-21 1984-10-02 National Semiconductor Corporation Dynamic MOS RAM with storage cells having a mainly insulated first plate
JPS58137242A (en) * 1982-02-09 1983-08-15 Seiko Epson Corp Integrated circuit device
US5049958A (en) * 1989-01-27 1991-09-17 Texas Instruments Incorporated Stacked capacitors for VLSI semiconductor devices
JPH02191370A (en) * 1989-12-15 1990-07-27 Seiko Epson Corp Semiconductor device

Also Published As

Publication number Publication date
JPS596068B2 (en) 1984-02-08

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