JPS5345940A - Semiconductor memory unit - Google Patents

Semiconductor memory unit

Info

Publication number
JPS5345940A
JPS5345940A JP12107576A JP12107576A JPS5345940A JP S5345940 A JPS5345940 A JP S5345940A JP 12107576 A JP12107576 A JP 12107576A JP 12107576 A JP12107576 A JP 12107576A JP S5345940 A JPS5345940 A JP S5345940A
Authority
JP
Japan
Prior art keywords
semiconductor memory
memory unit
memory capacity
memory
extended
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12107576A
Other languages
Japanese (ja)
Other versions
JPS5814747B2 (en
Inventor
Yasuharu Nagayama
Kazuhiro Shimotori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP51121075A priority Critical patent/JPS5814747B2/en
Publication of JPS5345940A publication Critical patent/JPS5345940A/en
Publication of JPS5814747B2 publication Critical patent/JPS5814747B2/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)

Abstract

PURPOSE:The PN junction formed by three semiconductor areas-which are provided in the source area part of a MOS transistor-is used as memory capacity, so that the leakage current can be reduced and the memory holding time can be extended and the memory capacity can be increased.
JP51121075A 1976-10-07 1976-10-07 semiconductor storage device Expired JPS5814747B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP51121075A JPS5814747B2 (en) 1976-10-07 1976-10-07 semiconductor storage device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP51121075A JPS5814747B2 (en) 1976-10-07 1976-10-07 semiconductor storage device

Publications (2)

Publication Number Publication Date
JPS5345940A true JPS5345940A (en) 1978-04-25
JPS5814747B2 JPS5814747B2 (en) 1983-03-22

Family

ID=14802216

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51121075A Expired JPS5814747B2 (en) 1976-10-07 1976-10-07 semiconductor storage device

Country Status (1)

Country Link
JP (1) JPS5814747B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60214559A (en) * 1984-04-10 1985-10-26 Nec Corp Mos type memory device

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6325034U (en) * 1986-07-31 1988-02-18
JPS63118841U (en) * 1986-10-30 1988-08-01
JPH01256919A (en) * 1988-04-07 1989-10-13 Toto Ltd Storage box for toilet booth

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60214559A (en) * 1984-04-10 1985-10-26 Nec Corp Mos type memory device
JPH0370905B2 (en) * 1984-04-10 1991-11-11 Nippon Electric Co

Also Published As

Publication number Publication date
JPS5814747B2 (en) 1983-03-22

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