JPS52133549A - Semiconductor swtich - Google Patents

Semiconductor swtich

Info

Publication number
JPS52133549A
JPS52133549A JP5000776A JP5000776A JPS52133549A JP S52133549 A JPS52133549 A JP S52133549A JP 5000776 A JP5000776 A JP 5000776A JP 5000776 A JP5000776 A JP 5000776A JP S52133549 A JPS52133549 A JP S52133549A
Authority
JP
Japan
Prior art keywords
swtich
semiconductor
turning
time
current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5000776A
Other languages
Japanese (ja)
Other versions
JPS562457B2 (en
Inventor
Takahiro Nagano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP5000776A priority Critical patent/JPS52133549A/en
Publication of JPS52133549A publication Critical patent/JPS52133549A/en
Publication of JPS562457B2 publication Critical patent/JPS562457B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/744—Gate-turn-off devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
  • Thyristor Switches And Gates (AREA)

Abstract

PURPOSE:To enable a big amount of current to be made on and off, by dividing a load current to flow in the transistor at the time of turning off with a freather of GTO being present at the time of turning on and during a state of being on.
JP5000776A 1976-05-04 1976-05-04 Semiconductor swtich Granted JPS52133549A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5000776A JPS52133549A (en) 1976-05-04 1976-05-04 Semiconductor swtich

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5000776A JPS52133549A (en) 1976-05-04 1976-05-04 Semiconductor swtich

Publications (2)

Publication Number Publication Date
JPS52133549A true JPS52133549A (en) 1977-11-09
JPS562457B2 JPS562457B2 (en) 1981-01-20

Family

ID=12846929

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5000776A Granted JPS52133549A (en) 1976-05-04 1976-05-04 Semiconductor swtich

Country Status (1)

Country Link
JP (1) JPS52133549A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56160066A (en) * 1980-05-15 1981-12-09 Meidensha Electric Mfg Co Ltd Gate turn-off thyristor
JPH01201959A (en) * 1988-02-05 1989-08-14 Matsushita Electron Corp Semiconductor device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59195036U (en) * 1983-06-14 1984-12-25 市光工業株式会社 Automotive outside mirror

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56160066A (en) * 1980-05-15 1981-12-09 Meidensha Electric Mfg Co Ltd Gate turn-off thyristor
JPH01201959A (en) * 1988-02-05 1989-08-14 Matsushita Electron Corp Semiconductor device

Also Published As

Publication number Publication date
JPS562457B2 (en) 1981-01-20

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