JPS52101981A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS52101981A
JPS52101981A JP1871576A JP1871576A JPS52101981A JP S52101981 A JPS52101981 A JP S52101981A JP 1871576 A JP1871576 A JP 1871576A JP 1871576 A JP1871576 A JP 1871576A JP S52101981 A JPS52101981 A JP S52101981A
Authority
JP
Japan
Prior art keywords
semiconductor device
power consumption
low power
high speed
obtain high
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1871576A
Other languages
Japanese (ja)
Inventor
Satoshi Shinozaki
Yoshio Nishi
Yoshihisa Mizutani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP1871576A priority Critical patent/JPS52101981A/en
Publication of JPS52101981A publication Critical patent/JPS52101981A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
    • H01L27/0233—Integrated injection logic structures [I2L]

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE:To obtain high speed IIL device with high integration and low power consumption.
JP1871576A 1976-02-23 1976-02-23 Semiconductor device Pending JPS52101981A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1871576A JPS52101981A (en) 1976-02-23 1976-02-23 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1871576A JPS52101981A (en) 1976-02-23 1976-02-23 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS52101981A true JPS52101981A (en) 1977-08-26

Family

ID=11979343

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1871576A Pending JPS52101981A (en) 1976-02-23 1976-02-23 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS52101981A (en)

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