JPS5338276A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5338276A
JPS5338276A JP11265276A JP11265276A JPS5338276A JP S5338276 A JPS5338276 A JP S5338276A JP 11265276 A JP11265276 A JP 11265276A JP 11265276 A JP11265276 A JP 11265276A JP S5338276 A JPS5338276 A JP S5338276A
Authority
JP
Japan
Prior art keywords
layer
semiconductor device
concentration layer
effected
making
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11265276A
Other languages
Japanese (ja)
Other versions
JPS5625026B2 (en
Inventor
Koichi Kanzaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP11265276A priority Critical patent/JPS5338276A/en
Publication of JPS5338276A publication Critical patent/JPS5338276A/en
Publication of JPS5625026B2 publication Critical patent/JPS5625026B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
    • H01L27/0233—Integrated injection logic structures [I2L]
    • H01L27/0244—I2L structures integrated in combination with analog structures

Abstract

PURPOSE:To enable high speed switching to be effected by making the base layer of lateral transistors in the double structure of a high concentration layer encircling the low concentration layer right under collector layer.
JP11265276A 1976-09-20 1976-09-20 Semiconductor device Granted JPS5338276A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11265276A JPS5338276A (en) 1976-09-20 1976-09-20 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11265276A JPS5338276A (en) 1976-09-20 1976-09-20 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5338276A true JPS5338276A (en) 1978-04-08
JPS5625026B2 JPS5625026B2 (en) 1981-06-10

Family

ID=14592077

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11265276A Granted JPS5338276A (en) 1976-09-20 1976-09-20 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5338276A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5619659A (en) * 1979-07-27 1981-02-24 Hitachi Ltd Manufacture of semiconductor device
US4404738A (en) * 1979-05-31 1983-09-20 Tokyo Shibaura Denki Kabushiki Kaisha Method of fabricating an I2 L element and a linear transistor on one chip

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5945242U (en) * 1982-09-18 1984-03-26 本田技研工業株式会社 Cam chain tensioner guide mounting device

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS516487A (en) * 1974-07-05 1976-01-20 Hitachi Ltd
JPS5132285A (en) * 1974-09-13 1976-03-18 Hitachi Ltd
JPS5154379A (en) * 1974-10-29 1976-05-13 Fairchild Camera Instr Co
JPS5161786A (en) * 1974-11-27 1976-05-28 Hitachi Ltd
JPS5161788A (en) * 1974-11-26 1976-05-28 Sony Corp
JPS5164386A (en) * 1974-10-09 1976-06-03 Philips Nv
JPS5169987A (en) * 1974-11-08 1976-06-17 Itt

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS516487A (en) * 1974-07-05 1976-01-20 Hitachi Ltd
JPS5132285A (en) * 1974-09-13 1976-03-18 Hitachi Ltd
JPS5164386A (en) * 1974-10-09 1976-06-03 Philips Nv
JPS5154379A (en) * 1974-10-29 1976-05-13 Fairchild Camera Instr Co
JPS5169987A (en) * 1974-11-08 1976-06-17 Itt
JPS5161788A (en) * 1974-11-26 1976-05-28 Sony Corp
JPS5161786A (en) * 1974-11-27 1976-05-28 Hitachi Ltd

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4404738A (en) * 1979-05-31 1983-09-20 Tokyo Shibaura Denki Kabushiki Kaisha Method of fabricating an I2 L element and a linear transistor on one chip
JPS5619659A (en) * 1979-07-27 1981-02-24 Hitachi Ltd Manufacture of semiconductor device

Also Published As

Publication number Publication date
JPS5625026B2 (en) 1981-06-10

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