JPS53121587A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS53121587A
JPS53121587A JP3669777A JP3669777A JPS53121587A JP S53121587 A JPS53121587 A JP S53121587A JP 3669777 A JP3669777 A JP 3669777A JP 3669777 A JP3669777 A JP 3669777A JP S53121587 A JPS53121587 A JP S53121587A
Authority
JP
Japan
Prior art keywords
semiconductor device
securing
concentration
base region
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3669777A
Other languages
Japanese (ja)
Other versions
JPS5711504B2 (en
Inventor
Hiroshi Iwasaki
Osamu Ozawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP3669777A priority Critical patent/JPS53121587A/en
Publication of JPS53121587A publication Critical patent/JPS53121587A/en
Publication of JPS5711504B2 publication Critical patent/JPS5711504B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
    • H01L27/0233—Integrated injection logic structures [I2L]
    • H01L27/0244—I2L structures integrated in combination with analog structures

Abstract

PURPOSE:To ensure a high-speed operation for the semiconductor device, by securing a low-concentration and deep layer at the area right under the collector region among the base region of first TR in the device formed through intergation of the I<2>L containing first vertical transistor TR of reverse structure and second vertical bipolar TR and while securing a high-concentration and shallow layer at the area surrounding the collector region and the base region of second TR respectively.
JP3669777A 1977-03-31 1977-03-31 Semiconductor device Granted JPS53121587A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3669777A JPS53121587A (en) 1977-03-31 1977-03-31 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3669777A JPS53121587A (en) 1977-03-31 1977-03-31 Semiconductor device

Related Child Applications (3)

Application Number Title Priority Date Filing Date
JP61002213A Division JPS61263149A (en) 1986-01-10 1986-01-10 Manufacture of semiconductor device
JP61002214A Division JPS61263150A (en) 1986-01-10 1986-01-10 Manufacture of semiconductor device
JP61002212A Division JPS61263148A (en) 1986-01-10 1986-01-10 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS53121587A true JPS53121587A (en) 1978-10-24
JPS5711504B2 JPS5711504B2 (en) 1982-03-04

Family

ID=12476963

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3669777A Granted JPS53121587A (en) 1977-03-31 1977-03-31 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS53121587A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5527697A (en) * 1978-08-11 1980-02-27 Siemens Ag Bipolar semiconductor integrated circuit and method of manufacturing same
JPS5710966A (en) * 1980-06-25 1982-01-20 Mitsubishi Electric Corp Manufacture of semiconductor integrated circuit device
JPS5763853A (en) * 1980-10-06 1982-04-17 Matsushita Electric Ind Co Ltd Semiconductor intergrated circuit and preparing method therefor
JPS5776870A (en) * 1980-10-30 1982-05-14 Toshiba Corp Semiconductor integrated circuit
JPS62245708A (en) * 1986-04-17 1987-10-27 Sanyo Electric Co Ltd Current mirror circuit
US5661066A (en) * 1980-12-17 1997-08-26 Matsushita Electric Industrial Co., Ltd. Semiconductor integrated circuit

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5350686A (en) * 1976-10-19 1978-05-09 Mitsubishi Electric Corp Production of semiconductor integrated circuit

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5350686A (en) * 1976-10-19 1978-05-09 Mitsubishi Electric Corp Production of semiconductor integrated circuit

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5527697A (en) * 1978-08-11 1980-02-27 Siemens Ag Bipolar semiconductor integrated circuit and method of manufacturing same
JPS5710966A (en) * 1980-06-25 1982-01-20 Mitsubishi Electric Corp Manufacture of semiconductor integrated circuit device
JPS5763853A (en) * 1980-10-06 1982-04-17 Matsushita Electric Ind Co Ltd Semiconductor intergrated circuit and preparing method therefor
JPS5776870A (en) * 1980-10-30 1982-05-14 Toshiba Corp Semiconductor integrated circuit
US5661066A (en) * 1980-12-17 1997-08-26 Matsushita Electric Industrial Co., Ltd. Semiconductor integrated circuit
JPS62245708A (en) * 1986-04-17 1987-10-27 Sanyo Electric Co Ltd Current mirror circuit
JPH0528910B2 (en) * 1986-04-17 1993-04-27 Sanyo Electric Co

Also Published As

Publication number Publication date
JPS5711504B2 (en) 1982-03-04

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