JPS5776870A - Semiconductor integrated circuit - Google Patents

Semiconductor integrated circuit

Info

Publication number
JPS5776870A
JPS5776870A JP55152671A JP15267180A JPS5776870A JP S5776870 A JPS5776870 A JP S5776870A JP 55152671 A JP55152671 A JP 55152671A JP 15267180 A JP15267180 A JP 15267180A JP S5776870 A JPS5776870 A JP S5776870A
Authority
JP
Japan
Prior art keywords
base
layer
gate
collector
leakage current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55152671A
Other languages
Japanese (ja)
Inventor
Koichi Kanzaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP55152671A priority Critical patent/JPS5776870A/en
Publication of JPS5776870A publication Critical patent/JPS5776870A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
    • H01L27/0233—Integrated injection logic structures [I2L]
    • H01L27/0244—I2L structures integrated in combination with analog structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE:To eliminate a leakage current between a collector and a base by a method wherein an activated base layer of an I<2>L gate is formed deeper than that of a linear transistor (Tr) and a collector layer of the I<2>L gate is formed shallower than an emitter layer of Tr. CONSTITUTION:Buried layers 221, 222, an epitaxial layer 23 and field oxide layers 241, 242, 243 are formed on a p type silicon substrate 21. A p<+> type activated base layer 26 is formed at a deep position by selective ion-injection of boron. A base 27 of a linear transistor is also formed. Then arsenic doped polycrystalline silicon layers 331-335 are formed and p<+> base regions 39, 41 and an injector 40 are formed by boron injection. Electrodes 45-49 are formed by formation of contact holes 42, 43, 441, 442, 443. With above method, a leakage current between the collector and the base of the I<2>L gate can be eliminated and the linear circuit can coexist together.
JP55152671A 1980-10-30 1980-10-30 Semiconductor integrated circuit Pending JPS5776870A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55152671A JPS5776870A (en) 1980-10-30 1980-10-30 Semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55152671A JPS5776870A (en) 1980-10-30 1980-10-30 Semiconductor integrated circuit

Publications (1)

Publication Number Publication Date
JPS5776870A true JPS5776870A (en) 1982-05-14

Family

ID=15545548

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55152671A Pending JPS5776870A (en) 1980-10-30 1980-10-30 Semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS5776870A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59152665A (en) * 1983-02-21 1984-08-31 Nec Corp Semiconductor device and manufacture thereof

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS501675A (en) * 1973-05-07 1975-01-09
JPS502477A (en) * 1973-05-07 1975-01-11
JPS53121587A (en) * 1977-03-31 1978-10-24 Toshiba Corp Semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS501675A (en) * 1973-05-07 1975-01-09
JPS502477A (en) * 1973-05-07 1975-01-11
JPS53121587A (en) * 1977-03-31 1978-10-24 Toshiba Corp Semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59152665A (en) * 1983-02-21 1984-08-31 Nec Corp Semiconductor device and manufacture thereof

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