JPS575358A - Semiconductor device and manufacture thereof - Google Patents
Semiconductor device and manufacture thereofInfo
- Publication number
- JPS575358A JPS575358A JP8000980A JP8000980A JPS575358A JP S575358 A JPS575358 A JP S575358A JP 8000980 A JP8000980 A JP 8000980A JP 8000980 A JP8000980 A JP 8000980A JP S575358 A JPS575358 A JP S575358A
- Authority
- JP
- Japan
- Prior art keywords
- type
- region
- base region
- leakage
- preventing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 3
- 229910052710 silicon Inorganic materials 0.000 abstract 3
- 239000010703 silicon Substances 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
Abstract
PURPOSE:To highly integrate a semiconductor device without adding a precise lithographic step in a bipolar transistor by improving the base region, thereby preventing the C-E leakage. CONSTITUTION:An n<+> type buried diffused layer 31' is formed in a p type silicon substrate 30, and an n type silicon epitaxial layer 31 is formed thereon. Thereafter, a p type base region 33, an n<+> type emitter region 34, a p<+> type base contact region 35, an n<+> type collector contact region 36 and buried oxidized film 32 are formed, and a transistor is thus formed. The part 39 of the p type base region extends deeply into the substrate as compared with the active part directly under the emitter region 34, and surrounds all the periphery of the emitter region 34. A thin relatively thin dioxidized silicon film 38 is formed on the surface of the base region 39. Thus, the distance between the end of the regions 34 and the 31 can be sufficiently increased, thereby preventing the C-E leakage.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8000980A JPS575358A (en) | 1980-06-13 | 1980-06-13 | Semiconductor device and manufacture thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8000980A JPS575358A (en) | 1980-06-13 | 1980-06-13 | Semiconductor device and manufacture thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS575358A true JPS575358A (en) | 1982-01-12 |
Family
ID=13706322
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8000980A Pending JPS575358A (en) | 1980-06-13 | 1980-06-13 | Semiconductor device and manufacture thereof |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS575358A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS598350A (en) * | 1982-07-06 | 1984-01-17 | Nec Corp | Semiconductor integrated circuit device |
JPH01232692A (en) * | 1988-03-11 | 1989-09-18 | Nkk Corp | Dc arc furnace for refining |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51114881A (en) * | 1975-04-02 | 1976-10-08 | Hitachi Ltd | Semiconductor device manufacturing method |
JPS538579A (en) * | 1976-07-12 | 1978-01-26 | Nec Corp | Semiconductor device |
JPS5571036A (en) * | 1978-11-13 | 1980-05-28 | Motorola Inc | Method of manufacturing integrated circuit |
-
1980
- 1980-06-13 JP JP8000980A patent/JPS575358A/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51114881A (en) * | 1975-04-02 | 1976-10-08 | Hitachi Ltd | Semiconductor device manufacturing method |
JPS538579A (en) * | 1976-07-12 | 1978-01-26 | Nec Corp | Semiconductor device |
JPS5571036A (en) * | 1978-11-13 | 1980-05-28 | Motorola Inc | Method of manufacturing integrated circuit |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS598350A (en) * | 1982-07-06 | 1984-01-17 | Nec Corp | Semiconductor integrated circuit device |
JPH01232692A (en) * | 1988-03-11 | 1989-09-18 | Nkk Corp | Dc arc furnace for refining |
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