JPS577943A - Manufacture of semiconductor integrated circuit device - Google Patents

Manufacture of semiconductor integrated circuit device

Info

Publication number
JPS577943A
JPS577943A JP8320380A JP8320380A JPS577943A JP S577943 A JPS577943 A JP S577943A JP 8320380 A JP8320380 A JP 8320380A JP 8320380 A JP8320380 A JP 8320380A JP S577943 A JPS577943 A JP S577943A
Authority
JP
Japan
Prior art keywords
film
base region
region
collector
manufacture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8320380A
Other languages
Japanese (ja)
Other versions
JPS6217860B2 (en
Inventor
Tsutomu Tashiro
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP8320380A priority Critical patent/JPS577943A/en
Publication of JPS577943A publication Critical patent/JPS577943A/en
Publication of JPS6217860B2 publication Critical patent/JPS6217860B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Element Separation (AREA)

Abstract

PURPOSE:To prevent an electric short circuit between an emitter and a collector, the deterioration of a transistor characteristic and the lowering of yield by deeply forming the depth of a junction of a base region in an interface region of a buried silicon oxide film. CONSTITUTION:A silicon dioxide film 12 is made up on a collector region 11, and a silicon nitride film 13 is built up selectively on the film 12. The base region 15 is formed according to ion injection, using a photo-resist film 14 as a mask. Oxidation is conducted, and the buried silicon film 16 is made up. In the base region formed in this manner, the depth of the junction is made deeper than other base region in the interface region of the buried silicon oxide film. Accordingly, a short circuit between the emitter and the collector can be prevented.
JP8320380A 1980-06-19 1980-06-19 Manufacture of semiconductor integrated circuit device Granted JPS577943A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8320380A JPS577943A (en) 1980-06-19 1980-06-19 Manufacture of semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8320380A JPS577943A (en) 1980-06-19 1980-06-19 Manufacture of semiconductor integrated circuit device

Publications (2)

Publication Number Publication Date
JPS577943A true JPS577943A (en) 1982-01-16
JPS6217860B2 JPS6217860B2 (en) 1987-04-20

Family

ID=13795762

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8320380A Granted JPS577943A (en) 1980-06-19 1980-06-19 Manufacture of semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS577943A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6341073A (en) * 1986-08-06 1988-02-22 Nec Corp Manufacture of semiconductor device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6294760U (en) * 1985-12-05 1987-06-17

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6341073A (en) * 1986-08-06 1988-02-22 Nec Corp Manufacture of semiconductor device

Also Published As

Publication number Publication date
JPS6217860B2 (en) 1987-04-20

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