JPS5526682A - Semiconductor integrated circuit device provided with lateral transistor - Google Patents

Semiconductor integrated circuit device provided with lateral transistor

Info

Publication number
JPS5526682A
JPS5526682A JP10023578A JP10023578A JPS5526682A JP S5526682 A JPS5526682 A JP S5526682A JP 10023578 A JP10023578 A JP 10023578A JP 10023578 A JP10023578 A JP 10023578A JP S5526682 A JPS5526682 A JP S5526682A
Authority
JP
Japan
Prior art keywords
region
type
density
layer
emitter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10023578A
Other languages
Japanese (ja)
Inventor
Hiroshi Saikai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP10023578A priority Critical patent/JPS5526682A/en
Publication of JPS5526682A publication Critical patent/JPS5526682A/en
Pending legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE: To improve fT, hFE and BVCBO by setting a density of the impurity at a low level and uniform in the vicinity of a collector and a maximum in the emitter side, by permitting an inclination in the vicinity of an emitter, in forming a base region.
CONSTITUTION: An N+-type buried region 12 and a P+-type buried region 13 surrounding it are formed in a Ptype Si substrate 11 to epitaxially-grow N-type layer 14 used for a base region over the full surface. Subsequently, a shallow P+- type insulation region 15 is provided in the layer 14 corresponding to the region 13 to be covered with a SiO2 film 15 over the full surface, and an opening 17 is given to a position corresponding to the region 12. Thereafter, in order to raise the density of a part of impurities in the base region, an N+-type region 18 is diffusion- formed to be heat-treated and as a result, the depth of the region 18 is increased and a region 5 is connected to the region 13. Subsequently, a P+-type emitter region 9 is diffusion-formed in the region 18 and a P+-type collector region 20 is provided in the layer 14 having a low density separated from the region 18. The base region 14 having the density difference is provided between the regions 19 and 20.
COPYRIGHT: (C)1980,JPO&Japio
JP10023578A 1978-08-16 1978-08-16 Semiconductor integrated circuit device provided with lateral transistor Pending JPS5526682A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10023578A JPS5526682A (en) 1978-08-16 1978-08-16 Semiconductor integrated circuit device provided with lateral transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10023578A JPS5526682A (en) 1978-08-16 1978-08-16 Semiconductor integrated circuit device provided with lateral transistor

Publications (1)

Publication Number Publication Date
JPS5526682A true JPS5526682A (en) 1980-02-26

Family

ID=14268592

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10023578A Pending JPS5526682A (en) 1978-08-16 1978-08-16 Semiconductor integrated circuit device provided with lateral transistor

Country Status (1)

Country Link
JP (1) JPS5526682A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55137370U (en) * 1980-04-02 1980-09-30

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55137370U (en) * 1980-04-02 1980-09-30

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