JPS57134956A - Manufacture of semiconductor integrated circuit - Google Patents

Manufacture of semiconductor integrated circuit

Info

Publication number
JPS57134956A
JPS57134956A JP2035181A JP2035181A JPS57134956A JP S57134956 A JPS57134956 A JP S57134956A JP 2035181 A JP2035181 A JP 2035181A JP 2035181 A JP2035181 A JP 2035181A JP S57134956 A JPS57134956 A JP S57134956A
Authority
JP
Japan
Prior art keywords
layer
type
emitter
integrated circuit
diffusion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2035181A
Other languages
Japanese (ja)
Other versions
JPS6052591B2 (en
Inventor
Tadashi Hirao
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2035181A priority Critical patent/JPS6052591B2/en
Priority to US06/348,541 priority patent/US4445268A/en
Priority to DE19823205022 priority patent/DE3205022A1/en
Publication of JPS57134956A publication Critical patent/JPS57134956A/en
Priority to US06/478,590 priority patent/US4486942A/en
Publication of JPS6052591B2 publication Critical patent/JPS6052591B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0623—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To eliminate the primary factor of an unstable threshold voltage and improve the controllability of hFE by a method wherein after gate oxide film of a BI-MOS integrated circuit is formed, an emitter layer is formed by diffusing impurity from polycrystalline Si. CONSTITUTION:An N<+> type buried layer 2 and N type epitaxial layers 3a and 3b are formed on a P type Si substrate 1. Then a P type base layer 8 is formed by ion-implantation and separated regions 5 are formed by selective oxidization. Then, after gate oxide film 14 and diffusion mask are formed by oxidizing the surface, a doped polycrystalline silicon layer is formed on the whole surface and a gate electrode 21c and an emitter diffusion layer 21a are formed by etching. Then, after a source 9a, a drain 10a and a base layer 8a and so forth are formed by ion-implantation, an emitter region 3a1 is formed by solid phase diffusion by thermal treatment. With this constitution, the threshold voltage can be made stable and the controllability of hFE can be improved.
JP2035181A 1981-02-14 1981-02-14 Method for manufacturing semiconductor integrated circuit device Expired JPS6052591B2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2035181A JPS6052591B2 (en) 1981-02-14 1981-02-14 Method for manufacturing semiconductor integrated circuit device
US06/348,541 US4445268A (en) 1981-02-14 1982-02-12 Method of manufacturing a semiconductor integrated circuit BI-MOS device
DE19823205022 DE3205022A1 (en) 1981-02-14 1982-02-12 METHOD FOR PRODUCING AN INTEGRATED SEMICONDUCTOR CIRCUIT
US06/478,590 US4486942A (en) 1981-02-14 1983-03-24 Method of manufacturing semiconductor integrated circuit BI-MOS device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2035181A JPS6052591B2 (en) 1981-02-14 1981-02-14 Method for manufacturing semiconductor integrated circuit device

Publications (2)

Publication Number Publication Date
JPS57134956A true JPS57134956A (en) 1982-08-20
JPS6052591B2 JPS6052591B2 (en) 1985-11-20

Family

ID=12024695

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2035181A Expired JPS6052591B2 (en) 1981-02-14 1981-02-14 Method for manufacturing semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS6052591B2 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6072255A (en) * 1983-09-28 1985-04-24 Toshiba Corp Semiconductor ic device and manufacture thereof
JPS6080267A (en) * 1983-10-07 1985-05-08 Toshiba Corp Semiconductor ic device and manufacture thereof
JPS60217657A (en) * 1984-04-12 1985-10-31 Mitsubishi Electric Corp Manufacture of semiconductor integrated circuit device
JPS61139057A (en) * 1984-12-11 1986-06-26 Toshiba Corp Manufacture of semiconductor integrated circuit device
JPS61206250A (en) * 1985-03-08 1986-09-12 Toshiba Corp Semiconductor integrated circuit device

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6072255A (en) * 1983-09-28 1985-04-24 Toshiba Corp Semiconductor ic device and manufacture thereof
JPH0148661B2 (en) * 1983-09-28 1989-10-20 Tokyo Shibaura Electric Co
JPS6080267A (en) * 1983-10-07 1985-05-08 Toshiba Corp Semiconductor ic device and manufacture thereof
JPH0315346B2 (en) * 1983-10-07 1991-02-28 Tokyo Shibaura Electric Co
JPS60217657A (en) * 1984-04-12 1985-10-31 Mitsubishi Electric Corp Manufacture of semiconductor integrated circuit device
JPS61139057A (en) * 1984-12-11 1986-06-26 Toshiba Corp Manufacture of semiconductor integrated circuit device
JPH0369179B2 (en) * 1984-12-11 1991-10-31 Tokyo Shibaura Electric Co
JPS61206250A (en) * 1985-03-08 1986-09-12 Toshiba Corp Semiconductor integrated circuit device
JPH0350422B2 (en) * 1985-03-08 1991-08-01 Tokyo Shibaura Electric Co

Also Published As

Publication number Publication date
JPS6052591B2 (en) 1985-11-20

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