JPS5586152A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5586152A JPS5586152A JP16034678A JP16034678A JPS5586152A JP S5586152 A JPS5586152 A JP S5586152A JP 16034678 A JP16034678 A JP 16034678A JP 16034678 A JP16034678 A JP 16034678A JP S5586152 A JPS5586152 A JP S5586152A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- film
- sio
- polycrystalline
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Bipolar Transistors (AREA)
Abstract
PURPOSE: To simplify bipolar element manufacturing process by selectively providing on a semiconductor substrate a polycrystalline Si film, with impurity concentration 1×1020/cm3 or higher, and operating photoetching and ion injection once and heat treatment twice.
CONSTITUTION: An n+-type buried-in layer 102 is formed on a p--type Si substrate 101, n-type epitaxial layer 103 is grown on the entire surface, and this is covered with SiO2 film 104 and Si3N4 film 105. Next, by opening a hole here, p+-type region 107 used for separation and thick SiO2 film 106 are formed in layer 103, and in layer 103 surrounded by these is also formed layer 106. Subsequently, one part of the laminated film is removed and n+-type collector region 108 is formed adjacent to layer 102 in layer 103 by diffusion. Here are formed n+-type polycrystalline Si- layer 110 and SiO2 film 112, and the laminated film on layer 103 is replaced by n+-type polycrystalline Si-layer 109 and SiO2 films 112 and 111. Next, by injecting p-type impurity ions 114, p-type base region 116' is formed in layer 103, and inside this is formed n+-type emitter region 115' by diffusion from layer 109.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16034678A JPS5586152A (en) | 1978-12-23 | 1978-12-23 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16034678A JPS5586152A (en) | 1978-12-23 | 1978-12-23 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5586152A true JPS5586152A (en) | 1980-06-28 |
Family
ID=15712989
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16034678A Pending JPS5586152A (en) | 1978-12-23 | 1978-12-23 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5586152A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20180070594A (en) | 2016-11-08 | 2018-06-26 | 아사히 가세이 가부시키가이샤 | An ethylene polymer, a drawn molded article and a microporous membrane |
-
1978
- 1978-12-23 JP JP16034678A patent/JPS5586152A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20180070594A (en) | 2016-11-08 | 2018-06-26 | 아사히 가세이 가부시키가이샤 | An ethylene polymer, a drawn molded article and a microporous membrane |
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