JPS5779658A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
JPS5779658A
JPS5779658A JP15464880A JP15464880A JPS5779658A JP S5779658 A JPS5779658 A JP S5779658A JP 15464880 A JP15464880 A JP 15464880A JP 15464880 A JP15464880 A JP 15464880A JP S5779658 A JPS5779658 A JP S5779658A
Authority
JP
Japan
Prior art keywords
type
region
vapor growth
emitter
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15464880A
Other languages
Japanese (ja)
Inventor
Kiyoshi Takaoki
Jiro Oshima
Etsuo Yokota
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP15464880A priority Critical patent/JPS5779658A/en
Publication of JPS5779658A publication Critical patent/JPS5779658A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/732—Vertical transistors
    • H01L29/7322—Vertical transistors having emitter-base and base-collector junctions leaving at the same surface of the body, e.g. planar transistor

Abstract

PURPOSE:To raise hFE and emitter-collector reverse dielectric strength, by making a base region of a vertical P-N-P transistor high impurity density different from a vapor growth layer, and increasing impurity density of an emitter. CONSTITUTION:A P type silicon substrate 1 is covered on its surface with silicon nitride layer. A transistor formation region is implanted gallium with ions. Next, the silicon nitride layer is removed, an N type buried layer 4 is diffused, and a vapor growth layer 12 is formed. Gallium implanted by heat treatment of the vapor growth is diffused as far as the surface of the vapor growth layer 12, and a P type collector region 15 is formed. Next, an N type base region 22, a P type emitter region 13, and a P type region 25 are formed. Thus, the base region is made to be of high-impurity density. A vertical P-N-P transistor of high dielectric strength and with no punching-through is obtained.
JP15464880A 1980-11-05 1980-11-05 Semiconductor integrated circuit device Pending JPS5779658A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15464880A JPS5779658A (en) 1980-11-05 1980-11-05 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15464880A JPS5779658A (en) 1980-11-05 1980-11-05 Semiconductor integrated circuit device

Publications (1)

Publication Number Publication Date
JPS5779658A true JPS5779658A (en) 1982-05-18

Family

ID=15588817

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15464880A Pending JPS5779658A (en) 1980-11-05 1980-11-05 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS5779658A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62295456A (en) * 1986-05-19 1987-12-22 Sanyo Electric Co Ltd Vertical pnp transistor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62295456A (en) * 1986-05-19 1987-12-22 Sanyo Electric Co Ltd Vertical pnp transistor

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