JPS57134967A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS57134967A JPS57134967A JP2035581A JP2035581A JPS57134967A JP S57134967 A JPS57134967 A JP S57134967A JP 2035581 A JP2035581 A JP 2035581A JP 2035581 A JP2035581 A JP 2035581A JP S57134967 A JPS57134967 A JP S57134967A
- Authority
- JP
- Japan
- Prior art keywords
- region
- collector
- poly
- silicon
- single crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 3
- 230000008878 coupling Effects 0.000 abstract 2
- 238000010168 coupling process Methods 0.000 abstract 2
- 238000005859 coupling reaction Methods 0.000 abstract 2
- 239000013078 crystal Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 238000005229 chemical vapour deposition Methods 0.000 abstract 1
- 238000005553 drilling Methods 0.000 abstract 1
- 238000005468 ion implantation Methods 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract 1
- 229920001296 polysiloxane Polymers 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
Abstract
PURPOSE:To reduce the collector-substrate coupling capacitance which has the largest percentage of the coupling capacitance of the transistor and also reduce the base and collector capacitance by forming the buried collector directly under the active region of the transistor only. CONSTITUTION:A P<+> type channel-cutting region 7 is formed by implanting boron into a P type semiconductor substrate 1 by ion-implantation and an N<+> type buried layer 3 is formed by injecting As ions after drilling an operture in the region 7. Low density poly-silicon 4 is formed by CVD method and melted by laser and the like. By above process, the poly-silicone on the buried collector layer 3 becomes single crystal silicon and the grain size of the poly-silicon on the oxide film becomes larger. The recess obtained by the neighborhood of this single crystal is oxidized and made grow to the same height as the poly-silicon. Then the oxide film is removwd and a base region 11, an emitter region 12 and a collector region 13 are formed in such a manner that the single crystal part is limited only to the extent in which the depletion layer of the P-N junction directly under the emitter is extended.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2035581A JPS57134967A (en) | 1981-02-14 | 1981-02-14 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2035581A JPS57134967A (en) | 1981-02-14 | 1981-02-14 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57134967A true JPS57134967A (en) | 1982-08-20 |
Family
ID=12024799
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2035581A Pending JPS57134967A (en) | 1981-02-14 | 1981-02-14 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57134967A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5990925A (en) * | 1982-11-17 | 1984-05-25 | Matsushita Electronics Corp | Manufacture of semiconductor device |
| JPS6164163A (en) * | 1984-07-09 | 1986-04-02 | フエアチアイルド カメラ アンド インストルメント コ−ポレ−シヨン | Self-aligned silicide base contact for bipolar transistor |
| JPS61131562A (en) * | 1984-11-30 | 1986-06-19 | Fujitsu Ltd | Manufacture of semiconductor device |
| JPS61242073A (en) * | 1985-04-19 | 1986-10-28 | Fujitsu Ltd | Manufacture of semiconductor device |
-
1981
- 1981-02-14 JP JP2035581A patent/JPS57134967A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5990925A (en) * | 1982-11-17 | 1984-05-25 | Matsushita Electronics Corp | Manufacture of semiconductor device |
| JPS6164163A (en) * | 1984-07-09 | 1986-04-02 | フエアチアイルド カメラ アンド インストルメント コ−ポレ−シヨン | Self-aligned silicide base contact for bipolar transistor |
| JPS61131562A (en) * | 1984-11-30 | 1986-06-19 | Fujitsu Ltd | Manufacture of semiconductor device |
| JPH0519810B2 (en) * | 1984-11-30 | 1993-03-17 | Fujitsu Ltd | |
| JPS61242073A (en) * | 1985-04-19 | 1986-10-28 | Fujitsu Ltd | Manufacture of semiconductor device |
| JPH0467779B2 (en) * | 1985-04-19 | 1992-10-29 | Fujitsu Ltd |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| GB1262705A (en) | Improvements relating to the fabrication of semiconductor devices | |
| GB1522291A (en) | Semiconductor device manufacture | |
| KR890003026A (en) | Manufacturing method of high speed high integration semiconductor device (BiCMOS) | |
| JPS57134967A (en) | Manufacture of semiconductor device | |
| JPS57162365A (en) | Semiconductor device | |
| JPS5627965A (en) | Manufacture of semiconductor device | |
| EP0339637A3 (en) | Lsi semiconductor device | |
| GB1325082A (en) | Semiconductor devices | |
| JPS5762552A (en) | Manufacture of semiconductor device | |
| GB1496306A (en) | Semiconductor integrated circuit including an epitaxial base type vertical transistor | |
| JPH03116774A (en) | Manufacture of semiconductor device | |
| EP0385906A3 (en) | Method of forming a lateral PNP transistor | |
| JPS54162477A (en) | Lateral transistor | |
| JPS55128820A (en) | Method of manufacturing semiconductor device | |
| JPS57162361A (en) | Manufacture of semiconductor integrated circuit | |
| JPS56100460A (en) | Bipolar mos semiconductor device and manufacture thereof | |
| JPS6459956A (en) | Heterostructure bipolar transistor and manufacture thereof | |
| JPS5787168A (en) | Semiconductor device | |
| JPS5683968A (en) | Semiconductor integrated circuit device | |
| JPS54126478A (en) | Transistor | |
| JPS5749249A (en) | Semiconductor integrated circuit device | |
| JPS5527682A (en) | Semiconductor device | |
| JPS5479578A (en) | Manufacture of semiconductor device | |
| JPS57197832A (en) | Manufacture of semiconductor device | |
| JPS54137283A (en) | Lateral pnp transistor |