JPS5527682A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5527682A
JPS5527682A JP10132378A JP10132378A JPS5527682A JP S5527682 A JPS5527682 A JP S5527682A JP 10132378 A JP10132378 A JP 10132378A JP 10132378 A JP10132378 A JP 10132378A JP S5527682 A JPS5527682 A JP S5527682A
Authority
JP
Japan
Prior art keywords
type
transistor
emitter
base region
regions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10132378A
Other languages
Japanese (ja)
Inventor
Hiroshi Saikai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP10132378A priority Critical patent/JPS5527682A/en
Publication of JPS5527682A publication Critical patent/JPS5527682A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8222—Bipolar technology
    • H01L21/8226—Bipolar technology comprising merged transistor logic or integrated injection logic

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Logic Circuits (AREA)

Abstract

PURPOSE:To increase fT as well as current amplification rate by providing an impurity density gradient to a base region of a vertical type transistor in such a way that the higher density side be an emitter side and the lower density side be a collector side. CONSTITUTION:A p<+> type buried layer 14 is selectively diffused in a n<+> type substrate 1 to which Sb whose axis of crystal orientation is in <111> is doped. Then a n type semiconductor layer 2 is formed by means of the epitaxial growth, and is oxidized before forming the second n+ type regions 5 and 6 to be used as collector regions of a vertical type npn transistor, are formed in the base region 13. Finally, the first p type region 3 to be used as an emitter of a lateral type pnp transistor 12, is formed.
JP10132378A 1978-08-19 1978-08-19 Semiconductor device Pending JPS5527682A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10132378A JPS5527682A (en) 1978-08-19 1978-08-19 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10132378A JPS5527682A (en) 1978-08-19 1978-08-19 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5527682A true JPS5527682A (en) 1980-02-27

Family

ID=14297598

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10132378A Pending JPS5527682A (en) 1978-08-19 1978-08-19 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5527682A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60122405A (en) * 1984-11-16 1985-06-29 Hitachi Ltd Control system of power generating water flow of connecting water system

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5176988A (en) * 1974-12-27 1976-07-03 Tokyo Shibaura Electric Co
JPS52150986A (en) * 1976-06-11 1977-12-15 Hitachi Ltd Compound semiconductor integrated circuit device and its production

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5176988A (en) * 1974-12-27 1976-07-03 Tokyo Shibaura Electric Co
JPS52150986A (en) * 1976-06-11 1977-12-15 Hitachi Ltd Compound semiconductor integrated circuit device and its production

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60122405A (en) * 1984-11-16 1985-06-29 Hitachi Ltd Control system of power generating water flow of connecting water system

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