GB1414066A - Junction transistors - Google Patents

Junction transistors

Info

Publication number
GB1414066A
GB1414066A GB4346773A GB4346773A GB1414066A GB 1414066 A GB1414066 A GB 1414066A GB 4346773 A GB4346773 A GB 4346773A GB 4346773 A GB4346773 A GB 4346773A GB 1414066 A GB1414066 A GB 1414066A
Authority
GB
United Kingdom
Prior art keywords
substrate
concentration
lightly doped
layer
zone
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4346773A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of GB1414066A publication Critical patent/GB1414066A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0821—Collector regions of bipolar transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)

Abstract

1414066 Transistor WESTERN ELECTRIC CO Inc 17 Sept 1973 [21 Sept 1972] 43467/73 Heading H1K The collector zone of a transistor comprises a lightly doped portion adjacent the base zone and a heavily doped portion separated from the base zone by the lightly doped portion, a major portion of the lightly doped portion having a linear graded impurity concentration. The impurity concentration reduces the non-linearity of the cut-off frequency characteristic. In an embodiment a heavily doped N-type monocrystalline silicon substrate 13B has a lightly doped N-type epitaxial layer 13A formed thereon. Regions 11 and 12 are also formed by diffusion. The concentration of impurities in layer 13A varies from 2.10<SP>15</SP> donors cm.<SP>-3</SP> at the base/collector interface to 8.10<SP>15</SP> donors cm.<SP>-3</SP> at the interface of layers 13A and 13B. The concentration gradient can be made by varying the concentration of impurity present during deposition of layer 13A, bombarding with ions of different energy or outdiffusion from the substrate 13B into layer 13A. The transistor may form part of an integrated circuit with the "substrate" 13B forming a buried collector zone in a substrate of opposite conductivity type.
GB4346773A 1972-09-21 1973-09-17 Junction transistors Expired GB1414066A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US29097672A 1972-09-21 1972-09-21

Publications (1)

Publication Number Publication Date
GB1414066A true GB1414066A (en) 1975-11-12

Family

ID=23118293

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4346773A Expired GB1414066A (en) 1972-09-21 1973-09-17 Junction transistors

Country Status (9)

Country Link
JP (1) JPS4971873A (en)
BE (1) BE804932A (en)
CA (1) CA978281A (en)
DE (1) DE2347067A1 (en)
FR (1) FR2200625B1 (en)
GB (1) GB1414066A (en)
IT (1) IT993337B (en)
NL (1) NL7312775A (en)
SE (1) SE391606B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2543736B1 (en) * 1983-03-31 1986-05-02 Thomson Csf METHOD FOR MANUFACTURING A HIGH-VOLTAGE POWER TRANSISTOR AT OPENING
JP2559800B2 (en) * 1988-03-25 1996-12-04 株式会社宇宙通信基礎技術研究所 Transistor evaluation method

Also Published As

Publication number Publication date
IT993337B (en) 1975-09-30
NL7312775A (en) 1974-03-25
FR2200625A1 (en) 1974-04-19
FR2200625B1 (en) 1979-08-31
SE391606B (en) 1977-02-21
BE804932A (en) 1974-01-16
DE2347067A1 (en) 1974-03-28
JPS4971873A (en) 1974-07-11
CA978281A (en) 1975-11-18

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee