IT993337B - JUNCTION TRANSISTOR PARTICULARLY FOR USE IN AMPLIFIED WIDE BAND RI - Google Patents
JUNCTION TRANSISTOR PARTICULARLY FOR USE IN AMPLIFIED WIDE BAND RIInfo
- Publication number
- IT993337B IT993337B IT2917773A IT2917773A IT993337B IT 993337 B IT993337 B IT 993337B IT 2917773 A IT2917773 A IT 2917773A IT 2917773 A IT2917773 A IT 2917773A IT 993337 B IT993337 B IT 993337B
- Authority
- IT
- Italy
- Prior art keywords
- wide band
- junction transistor
- transistor particularly
- amplified wide
- amplified
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0821—Collector regions of bipolar transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US29097672A | 1972-09-21 | 1972-09-21 |
Publications (1)
Publication Number | Publication Date |
---|---|
IT993337B true IT993337B (en) | 1975-09-30 |
Family
ID=23118293
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT2917773A IT993337B (en) | 1972-09-21 | 1973-09-20 | JUNCTION TRANSISTOR PARTICULARLY FOR USE IN AMPLIFIED WIDE BAND RI |
Country Status (9)
Country | Link |
---|---|
JP (1) | JPS4971873A (en) |
BE (1) | BE804932A (en) |
CA (1) | CA978281A (en) |
DE (1) | DE2347067A1 (en) |
FR (1) | FR2200625B1 (en) |
GB (1) | GB1414066A (en) |
IT (1) | IT993337B (en) |
NL (1) | NL7312775A (en) |
SE (1) | SE391606B (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2543736B1 (en) * | 1983-03-31 | 1986-05-02 | Thomson Csf | METHOD FOR MANUFACTURING A HIGH-VOLTAGE POWER TRANSISTOR AT OPENING |
JP2559800B2 (en) * | 1988-03-25 | 1996-12-04 | 株式会社宇宙通信基礎技術研究所 | Transistor evaluation method |
-
1973
- 1973-03-30 CA CA167,643A patent/CA978281A/en not_active Expired
- 1973-09-11 SE SE7312357A patent/SE391606B/en unknown
- 1973-09-17 NL NL7312775A patent/NL7312775A/xx not_active Application Discontinuation
- 1973-09-17 BE BE135714A patent/BE804932A/en unknown
- 1973-09-17 GB GB4346773A patent/GB1414066A/en not_active Expired
- 1973-09-19 DE DE19732347067 patent/DE2347067A1/en active Pending
- 1973-09-20 IT IT2917773A patent/IT993337B/en active
- 1973-09-20 FR FR7333797A patent/FR2200625B1/fr not_active Expired
- 1973-09-21 JP JP10607473A patent/JPS4971873A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
NL7312775A (en) | 1974-03-25 |
SE391606B (en) | 1977-02-21 |
JPS4971873A (en) | 1974-07-11 |
BE804932A (en) | 1974-01-16 |
FR2200625B1 (en) | 1979-08-31 |
FR2200625A1 (en) | 1974-04-19 |
GB1414066A (en) | 1975-11-12 |
DE2347067A1 (en) | 1974-03-28 |
CA978281A (en) | 1975-11-18 |
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